ScholarWorks@Sookmyung Women's University: Journal : IEEE Transactions on Magnetics

IEEE Transactions on Magnetics

Journal Title

IEEE Transactions on Magnetics

ISSN

E 1941-0069 | P 0018-9464 | 0018-9464 | 1941-0069

Publisher

Institute of Electrical and Electronics Engineers
IEEE

Listed on(Coverage)

JCR	1997-2019
SJR	1999-2019
CiteScore	2011-2019
SCI	2010-2019
SCIE	2010-2021
CC	2016-2021
SCOPUS	2017-2020

Active

Active
based on the information
- SCOPUS:2020-10

Country

Aime & Scopes

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The IEEE Transactions on Magnetics publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.

Homepage

https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=20

Article List

1 - 15 out of 15 results.

Electronic and Magnetic Properties of Transition-Metal-Doped WS2 Monolayer; First-Principles Investigations Go to Link

Hyun, Jung-Min, Kim, Miyoung

ArticleIssue Date2019CitationIEEE TRANSACTIONS ON MAGNETICS, v.55, no.2PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Effect on the Electronic, Magnetic and Thermoelectric Properties of Bi2Te3 by the Cerium Substitution Go to Link

Quang Van Tran, Kim, Miyoung

ArticleIssue Date2014CitationIEEE TRANSACTIONS ON MAGNETICS, v.50, no.1PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Composition-Dependent Crystal Structure and Magnetism in Nanocrystalline Co-Rich Alloy

Chun, B. S., Cho, J. U., Kim, S. D., Kim, Y. S., Hwang, J. Y., Kim, S. S., Rhee, J. R., Kim, T. W., Hong, J. P., Jung, M. H., et al.

ArticleIssue Date2009CitationIEEE TRANSACTIONS ON MAGNETICS, v.45, no.10, pp.3862 - 3864PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Effect of Interface Roughness on Magnetoresistance and Magnetization Switching in Double-Barrier Magnetic Tunnel Junction Go to Link

Hwang, J. Y., Lee, S. Y., Lee, N. I., Yim, H. I., Kim, M. Y., Lee, W. C., Rhee, J. R., Chun, B. S., Kim, T. W., Kim, Y. K., et al.

ArticleIssue Date2009CitationIEEE TRANSACTIONS ON MAGNETICS, v.45, no.6, pp.2396 - 2398PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Designing the Composition of Amorphous Free Layer of a Magnetic Tunnel Junction Go to Link

Park, Joyoung, Yim, Haein

ArticleIssue Date2009CitationIEEE TRANSACTIONS ON MAGNETICS, v.45, no.6, pp.2413 - 2416PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Magneto-transport characteristics of magnetic tunnel junction with a synthetic antiferromagnetic amorphous CoFeSiB free layer

Chun B.S., Lee S.Y., Rhee J.R., Yim H.I., Hwang J.Y., Kim T.W., Kim Y.K.

ArticleIssue Date2008CitationIEEE Transactions on Magnetics, v.44, no.11 PART 2, pp.2598 - 2600PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Magnetic Proerties of Ge/MnAs Digital Heterostructures

J. J. Lee, 김미영, J. H. Song, Y. Cui, J. B. Ketterson

ArticleIssue Date2007CitationIEEE Transactions on Magnetics, v.43, no.6, pp.3034 - 3036PublisherInstitute of Electrical and Electronics Engineers

Dependence of the exchange bias and coercivity of [Pd/ferromagnet](N)/FeMn multilayers on the stack number N

Joo, H. W., Lee, M. S., Kim, S. W., Kim, S. S., Lee, J. Y., Back, J. Y., You, C. -Y., Lee, K. A., Rhee, J. R., Lee, S. S., et al.

ArticleIssue Date2006CitationIEEE TRANSACTIONS ON MAGNETICS, v.42, no.10, pp.2987 - 2989PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Bias voltage dependence of magnetic tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer

Kim, You Song, Chun, Byong Sun, Kim, Deok-kee, Hwang, Jae Yeon, Kim, Soon Sub, Rhee, Jang Roh, Kim, Keewon, Kim, Taewan, Kim, Young Keun

ArticleIssue Date2006CitationIEEE TRANSACTIONS ON MAGNETICS, v.42, no.10, pp.2649 - 2651PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Magnetization switching and tunneling magnetoresistance effects of MTJs with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB Go to Link

Hwang J.Y., Kim S.S., Rhee J.R., Chun B.S., You I.S., Oh B.S., Kim Y.K., Kim T., Park W.

ArticleIssue Date2005CitationINTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference, pp.2685 - 2687

Magnetization switching and tunneling magnetoresistance effects of MTJs with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB

Rhee, JR, Hwang, JY, Kim, SS, Kim, AY, Chun, BS, Yoo, IS, Oh, BS, Kim, YK, Kim, TW, Park, WJ

ArticleIssue Date2005CitationIEEE TRANSACTIONS ON MAGNETICS, v.41, no.10, pp.2685 - 2687PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Improved selectivity of synthetic anti-ferromagnetic, free layer in high-density MRAM array

Hwang, I, Jeong, W, Park, J, Park, WJ, Jang, YM, Cho, YJ, Hwang, S, Rhee, J, Kim, T

ArticleIssue Date2005CitationIEEE TRANSACTIONS ON MAGNETICS, v.41, no.10, pp.2673 - 2675PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

High exchange-coupling field and thermal stability of antiferromagnetic Ir-Mn pinned spin-valve films

Hwang, JY, Kim, MY, Rhee, JR, Lee, SS, Hwang, DG, Lee, SH, Yu, SC

ArticleIssue Date2002CitationIEEE TRANSACTIONS ON MAGNETICS, v.38, no.5, pp.2764 - 2766PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Magnetoresistance in La0.8Sr0.2MnO3-delta biepitaxial grain boundary junction

Lee, SS, Hwang, DG, Park, CM, Rhee, JR

ArticleIssue Date1999CitationIEEE TRANSACTIONS ON MAGNETICS, v.35, no.5, pp.2871 - 2873PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

[Ni/Mn] superlattice-based spin-valves with high thermal stabilities

Choi, KL, Kim, KM, Lee, NI, Kim, MY, Rhee, JR, Lee, SS, Hwang, DG, Park, CM

ArticleIssue Date1999CitationIEEE TRANSACTIONS ON MAGNETICS, v.35, no.5, pp.2943 - 2945PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

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