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Journal of Applied Physics

Journal Title

  • Journal of Applied Physics

ISSN

  • E 1089-7550 | P 0021-8979 | 1089-7550 | 0021-8979

Publisher

  • American Institute of Physics
  • AIP

Listed on(Coverage)

JCR1997-2019
SJR1999-2019
CiteScore2011-2019
SCI2010-2019
SCIE2010-2021
CC2016-2021
SCOPUS2017-2020

Active

  • Active

    based on the information

    • SCOPUS:2020-10

Country

  • USA

Aime & Scopes

  • The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research. Topics covered in JAP are diverse and reflect the most current applied physics research, including: /// Applied biophysics /// Dielectrics, ferroelectrics, and multiferroics /// Electrical discharges, plasmas, and plasma-surface interactions /// Emerging, interdisciplinary, and other fields of applied physics /// Magnetism, spintronics, and superconductivity /// Organic-Inorganic systems, including organic electronics /// Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena /// Physics of devices and sensors /// Physics of materials, including electrical, thermal, mechanical and other properties /// Physics of matter under extreme conditions /// Physics of nanoscale, mesoscale, and low-dimensional systems /// Physics of semiconductors /// Thin films, interfaces, and surfaces The Journal of Applied Physics publishes manuscripts that: /// Develop underlying physical principles for innovative technologies /// Present scientific advances to modern applied physics problems across multiple disciplines /// Enable real world applications based on innovative applied physics /// Identify the physical reasons for materials properties Please refer to the Editorial Policies section for Journal of Applied Physics’ criteria for publication.

Homepage

Article List

1 - 20 out of 44 results.

A perspective on nanoscale pattern formation at surfaces by ion-beam irradiationGo to Link

Cuerno, R., Kim, Jae Sung

ArticleIssue Date2020CitationJournal of Applied Physics, v.128, no.18, pp.1 - 36PublisherAmerican Institute of Physics Inc.
Enhancement of the thermoelectric performance of oxygen substituted bismuth tellurideGo to Link

Quang Van Tran, Kim, Miyoung

ArticleIssue Date2017CitationJOURNAL OF APPLIED PHYSICS, v.122, no.24PublisherAMER INST PHYSICS
Role of O and Se defects in the thermoelectric properties of bismuth oxide selenideGo to Link

Quang Van Tran, Kim, Miyoung

ArticleIssue Date2016CitationJOURNAL OF APPLIED PHYSICS, v.120, no.19PublisherAMER INST PHYSICS
Nanopatterning of swinging substrates by ion-beam sputteringGo to Link

Yoon, Sun Mi, Kim, J. -S.

ArticleIssue Date2016CitationJOURNAL OF APPLIED PHYSICS, v.119, no.20PublisherAMER INST PHYSICS
Suppression of phonon transport in multiple Si/PtSi heterostructuresGo to Link

Oh, Jung Hyun, Jang, Moon-Gyu, Kim, Hanchul, Moon, S. E., Shin, Mincheol

ArticleIssue Date2015CitationJOURNAL OF APPLIED PHYSICS, v.117, no.24PublisherAMER INST PHYSICS
Effects of low-temperature (120 degrees C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistorsGo to Link

Kim, JS (Kim, Jae-Sung), Oh, BS (Oh, Byung Su), Piao, M (Piao, Mingxing), Joo, MK (Joo, Min-Kyu), Jang, HK (Jang, Ho-Kyun), Ahn, SE (Ahn, Seung-Eon), Kim, GT (Kim, Gyu-Tae)

ArticleIssue Date2014CitationJOURNAL OF APPLIED PHYSICS, v.116, no.24PublisherAMER INST PHYSICS
Effects of polycrystallinity in nano patterning by ion-beam sputteringGo to Link

Yoon, Sun Mi, Kim, J. -S., Yoon, D., Cheong, H., Kim, Y., Lee, H. H.

ArticleIssue Date2014CitationJOURNAL OF APPLIED PHYSICS, v.116PublisherAMER INST PHYSICS
Observation of second spin reorientation transition within ultrathin region in Fe films on Ag(001) surfaceGo to Link

Khim, T. -Y., Shin, M., Park, B. -G., Lee, H., Park, J. -H.

ArticleIssue Date2014CitationJOURNAL OF APPLIED PHYSICS, v.115, no.23PublisherAMER INST PHYSICS
Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistorsGo to Link

Kim, JS, Joo, MK, Piao, MX, Ahn, SE, Choi, YH, Jang, HK, Kim, GT

ArticleIssue Date2014CitationJOURNAL OF APPLIED PHYSICS, v.115, no.11, pp.1 - 7PublisherAMER INST PHYSICS
Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors

Joo, MK, Mouis, M, Jeon, DY, Kim, GT, Kim, UJ, Ghibaudo, G

ArticleIssue Date2013CitationJOURNAL OF APPLIED PHYSICS, v.114, no.15PublisherAMER INST PHYSICS
The metal-insulator phase transition in the strained GdBiTe3Go to Link

Quang Van Tran, Kim, Miyoung

ArticleIssue Date2013CitationJOURNAL OF APPLIED PHYSICS, v.113, no.17PublisherAMER INST PHYSICS
Time-dependent magnetization reversal in amorphous CoSiB/Pd multilayers with perpendicular magnetic anisotropyGo to Link

Yoon, Jungbum, Jung, Sol, Choi, Youngha, Cho, Jaehun, You, Chun-Yeol, Jung, Myung-Hwa, Yim, H. I.

ArticleIssue Date2013CitationJOURNAL OF APPLIED PHYSICS, v.113, no.17PublisherAMER INST PHYSICS
Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductorsGo to Link

Noh, Ji-Young, Kim, Hanchul, Nahm, Ho-Hyun, Kim, Yong-Sung, Kim, Dae Hwan, Ahn, Byung-Du, Lim, Jun-Hyung, Kim, Gun Hee, Lee, Je-Hun, Song, Junho

ArticleIssue Date2013CitationJOURNAL OF APPLIED PHYSICS, v.113, no.18PublisherAMER INST PHYSICS
Electron doping limit in Al-doped ZnO by donor-acceptor interactionsGo to Link

Noh, Ji-Young, Kim, Hanchul, Kim, Yong-Sung, Park, C. H.

ArticleIssue Date2013CitationJOURNAL OF APPLIED PHYSICS, v.113, no.15PublisherAMER INST PHYSICS
Theoretical investigation on the magnetic phase stability of Fe-doped Bi telluridesGo to Link

Kim, M, Song, JH

ArticleIssue Date2012CitationJOURNAL OF APPLIED PHYSICS, v.111, no.7, pp.1 - 4PublisherAMER INST PHYSICS
Magnetism of ultrathin Fe films on MgO(001)Go to Link

Yang, Seolun, Park, H. -K., Kim, J. -S., Kim, J. -Y., Park, B. -G.

ArticleIssue Date2011CitationJOURNAL OF APPLIED PHYSICS, v.110, no.9PublisherAMER INST PHYSICS
Studies on electric triggering of the metal-insulator transition in VO2 thin films between 77 K and 300 KGo to Link

Yang, Z (Yang, Zheng), Hart, S (Hart, Sean), Ko, C (Ko, Changhyun), Yacoby, A (Yacoby, Amir), Ramanathan, S (Ramanathan, Shr

ArticleIssue Date2011CitationJOURNAL OF APPLIED PHYSICS, v.110, no.3PublisherAMER INST PHYSICS
Geometric confinement effects on the metal-insulator transition temperature and stress relaxation in VO2 thin films grown on siliconGo to Link

Viswanath, B (Viswanath, B.), Ko, CH (Ko, Changhyun), Yang, Z (Yang, Zheng), Ramanathan, Shriram

ArticleIssue Date2011CitationJOURNAL OF APPLIED PHYSICS, v.109, no.6PublisherAMER INST PHYSICS
Controlled surface adsorption of fd filamentous phage by tuning of the pH and the functionalization of the surface

Jeon, DY, Hwang, KH, Park, SJ, Kim, YJ, Joo, MK, Ahn, SE, Kim, GT, Nam, CH

ArticleIssue Date2011CitationJOURNAL OF APPLIED PHYSICS, v.109, no.6PublisherAMER INST PHYSICS
Nanoscale probing of electronic band gap and topography of VO2 thin film surfaces by scanning tunneling microscopyGo to Link

Yin, W (Yin, W.), Wolf, S (Wolf, S.), Ko, C (Ko, C.), Ramanathan, S (Ramanathan, S.), Reinke, P (Reinke, P.)

ArticleIssue Date2011CitationJOURNAL OF APPLIED PHYSICS, v.109, no.2PublisherAMER INST PHYSICS
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