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Applied Physics Letters

Journal Title

  • Applied Physics Letters

ISSN

  • E 1077-3118 | P 0003-6951 | 1077-3118 | 0003-6951

Publisher

  • American Institute of Physics
  • AIP

Listed on(Coverage)

JCR1997-2019
SJR1999-2019
CiteScore2011-2019
SCI2010-2019
SCIE2010-2021
CC2016-2021
SCOPUS2017-2020

Active

  • Active

    based on the information

    • SCOPUS:2020-10

Country

  • USA

Aime & Scopes

  • Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. Topics covered in APL are diverse and reflect the most important subjects in applied physics, including: Photonics and optoelectronics Surfaces and interfaces Structural, mechanical, optical, and thermodynamic properties of advanced materials Semiconductors Magnetics and spintronics Superconductivity and superconducting electronics Dielectrics, ferroelectrics, and multiferroics Nanoscale science and technology Organic electronics and photonics Device physics Biophysics, Biomaterials, Liquids and Soft Matter Energy conversion and storage Interdisciplinary and general physics

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Article List

1 - 20 out of 50 results.

Understanding random telegraph noise in two-dimensional BP/ReS2 heterointerface

Lee Byung Chul, Seo Youkyung, Kim Chulmin, Kim Yeeun, Joo Min-Kyu, Kim Gyu-Tae

ArticleIssue Date2022CitationAPPLIED PHYSICS LETTERS, v.120, no.25, pp.1 - 8PublisherAIP Publishing
Thermal expansion characterization of thin films using harmonic Joule heating combined with atomic force microscopyGo to Link

Chaikasetsin, Settasit, Kodama, Takashi, Bae, Kiho, Jung, Jun Young, Shin, Jeeyoung, Lee, Byung Chul, Kim, Brian S. Y., Seo, Jungju, Sim, Uk, Prinz, Fritz B., et al.

ArticleIssue Date2021CitationAPPLIED PHYSICS LETTERS, v.118, no.19, pp.1 - 6PublisherAMER INST PHYSICS
Influence of chemical treatment on strain and charge doping in vertically stacked monolayer-bilayer MoS2Go to Link

Kim, Hanul, Lee, Taegeon, Ko, Hayoung, Kim, Soo Min, Rho, Heesuk

ArticleIssue Date2020CitationApplied Physics Letters, v.117, no.20, pp.1 - 6PublisherAmerican Institute of Physics Inc.
Origin of relaxation frequency shift in blue organic light-emitting diodesGo to Link

Kim, Yeeun, Na, Inyeob, Seo, Youkyung, Chae, Heeyoung, Oh, Kilhwan, Yang, Joonyoung, Yoon, Sooyoung, Joo, Min-Kyu

ArticleIssue Date2020CitationAPPLIED PHYSICS LETTERS, v.117, no.10PublisherAMER INST PHYSICS
Origin of exciplex degradation in organic light emitting diodes: Thermal stress effects over glass transition temperature of emission layerGo to Link

Na, Inyeob, Kim, Ki Ju, Kim, Gyu-Tae, Seo, Youkyung, Kim, Yeeun, Kim, Young Kwan, Joo, Min-Kyu

ArticleIssue Date2020CitationAPPLIED PHYSICS LETTERS, v.117, no.6PublisherAMER INST PHYSICS
Effect of interlayer tunneling barrier on carrier transport and fluctuation in multilayer ReS2Go to Link

Lee, Byung Chul, Kim, Chul Min, Kim, Soojin, Kim, Gyu-Tae, Joo, Min-Kyu

ArticleIssue Date2020CitationAPPLIED PHYSICS LETTERS, v.117, no.3PublisherAMER INST PHYSICS
Understanding tunable photoresponsivity of two-dimensional multilayer phototransistors: Interplay between thickness and carrier mobilityGo to Link

Moon, Young-Sun, Shon, Ji Hoon, Kim, Doyoon, Lee, Kookjin, Joo, Min-Kyu, Kim, Gyu-Tae

ArticleIssue Date2020CitationAPPLIED PHYSICS LETTERS, v.116, no.18PublisherAMER INST PHYSICS
Tuning the optical and electrical properties of MoS2 by selective Ag photo-reductionGo to Link

Kim, Eunpa, Lee, Yoonkyung, Ko, Changhyun, Park, Yunjeong, Yeo, Junyeob, Chen, Yabin, Choe, Hwan Sung, Allen, Frances I., Rho, Junsuk, Tongay, Sefaattin, et al.

ArticleIssue Date2018CitationAPPLIED PHYSICS LETTERS, v.113, no.1PublisherAMER INST PHYSICS
Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrateGo to Link

Lee, K., Lee, T. Y., Yang, S. M., Lee, D. H., Park, J., Chae, S. C.

ArticleIssue Date2018CitationAPPLIED PHYSICS LETTERS, v.112, no.20PublisherAMER INST PHYSICS
Variable range hopping electric and thermoelectric transport in anisotropic black phosphorusGo to Link

LIU, HUILI, CHOE, HWAN SUNG, CHEN, YABIN, SUH, JOONKI, 고창현, TONGAY, SEFAATTIN, WU, JUNQIAO

ArticleIssue Date2017CitationApplied Physics Letters, v.111, no.10PublisherAmerican Institute of Physics
Phonon conduction in silicon nanobeamsGo to Link

Park, W (Park, Woosung), Shin, DD (Shin, Dongsuk D.), Kim, SJ (Kim, Soo Jin), Katz, JS (Katz, Joseph S.), Park, J (Park, Joonsuk), Ahn, CH (Ahn, Chae Hyuck), Kodama, T (Kodama, Takashi), Asheghi, M (Asheghi, Mehdi), Kenny, TW (Kenny, Thomas W.), Goodson, KE (Goodson, Kenneth

ArticleIssue Date2017CitationAPPLIED PHYSICS LETTERS, v.110, no.21PublisherAMER INST PHYSICS
Thickness-dependent carrier mobility of ambipolar MoTe2: Interplay between interface trap and Coulomb scatteringGo to Link

Ji, H (Ji, Hyunjin), Lee, G (Lee, Gwanmu), Joo, MK (Joo, Min-Kyu), Yun, Y (Yun, Yoojoo), Yi, H (Yi, Hojoon), Park, JH (Park, Ji-Hoon), Suh, D (Suh, Dongseok), Lim, SC (Lim, Seong Chu)

ArticleIssue Date2017CitationAPPLIED PHYSICS LETTERS, v.110, no.18PublisherAMER INST PHYSICS
Strong Coulomb scattering effects on low frequency noise in monolayer WS2 field-effect transistorsGo to Link

Joo, MK (Joo, Min-Kyu), Yun, Y (Yun, Yoojoo), Yun, S (Yun, Seokjoon), Lee, YH (Lee, Young Hee), Suh, D (Suh, Dongseok)

ArticleIssue Date2016CitationAPPLIED PHYSICS LETTERS, v.109, no.15, pp.1 - 6PublisherAMER INST PHYSICS
Spin accumulation at in-situ grown Fe/GaAs(100) Schottky barriers measured using the three- and four-terminal methodsGo to Link

Nam, Song Hyeon, Park, Tae-Eon, Park, Youn Ho, Ihm, Hae-In, Koo, Hyun Cheol, Kim, Hyung-jun, Han, Suk Hee, Chang, Joonyeon

ArticleIssue Date2016CitationAPPLIED PHYSICS LETTERS, v.109, no.12PublisherAMER INST PHYSICS
Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structuresGo to Link

Kim, B (Kim, Bongjun), Liang, K (Liang, Kelly), Geier, ML (Geier, Michael L.), Hersam, MC (Hersam, Mark C.), Dodabalapur, A (Dodabalapur, A

ArticleIssue Date2016CitationAPPLIED PHYSICS LETTERS, v.109, no.2, pp.1 - 5PublisherAMER INST PHYSICS
Decoupling indirect topographic cross-talk in band excitation piezoresponse force microscopy imaging and spectroscopyGo to Link

Yang, Sang Mo, Mazet, Lucie, Okatan, M. Baris, Jesse, Stephen, Niu, Gang, Schroeder, Thomas, Schamm-Chardon, Sylvie, Dubourdieu, Catherine, Baddorf, Arthur P., Kalinin, Sergei V.

ArticleIssue Date2016CitationAPPLIED PHYSICS LETTERS, v.108, no.25, pp.1 - 5PublisherAMER INST PHYSICS
Pressure-induced structural transition of CdxZn1-xO alloysGo to Link

Chen, Yabin, Zhang, Shuai, Gao, Weiwei, Ke, Feng, Yan, Jinyuan, Saha, Bivas, Ko, Changhyun, Suh, Joonki, Chen, Bin, Ager, Joel W., III, et al.

ArticleIssue Date2016CitationAPPLIED PHYSICS LETTERS, v.108, no.15PublisherAMER INST PHYSICS
Fluoropolymer coatings for improved carbon nanotube transistor device and circuit performance

Jang, S (Jang, Seonpil), Kim, B (Kim, Bongjun), Geier, ML (Geier, Michael L.), Prabhumirashi, PL (Prabhumiras, Hersam, MC (Hersam, Mark C.), Dodabalapur, A (Dodabalapur, A

ArticleIssue Date2014CitationAPPLIED PHYSICS LETTERS, v.105, no.12PublisherAMER INST PHYSICS
Separation of interlayer resistance in multilayer MoS2 field-effect transistors

Na, J, Shin, M, Joo, MK, Huh, J, Kim, YJ, Choi, HJ, Shim, JH, Kim, GT

ArticleIssue Date2014CitationAPPLIED PHYSICS LETTERS, v.104, no.23, pp.1 - 6PublisherAMER INST PHYSICS
Separation of surface accumulation and bulk neutral channel in junctionless transistors

Jeon, DY, Park, SJ, Mouis, M, Joo, MK, Barraud, S, Kim, GT, Ghibaudo, G

ArticleIssue Date2014CitationAPPLIED PHYSICS LETTERS, v.104, no.26PublisherAMER INST PHYSICS
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