Electronic Structure of amorphous InGaO3(ZnO)0.5 Thin Films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 조덕용 | - |
dc.contributor.author | 송재원 | - |
dc.contributor.author | 황철성 | - |
dc.contributor.author | 최우석 | - |
dc.contributor.author | 노태원 | - |
dc.contributor.author | 김재영 | - |
dc.contributor.author | 이한길 | - |
dc.contributor.author | 박병규 | - |
dc.contributor.author | s.y.cho | - |
dc.contributor.author | 오세정 | - |
dc.contributor.author | 정종한 | - |
dc.contributor.author | 정재경 | - |
dc.contributor.author | 모연곤 | - |
dc.date.available | 2021-02-22T14:03:15Z | - |
dc.date.issued | 2009-12 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.issn | 1879-2731 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/13628 | - |
dc.description.abstract | The electronic structure of amorphous semiconductor InGaO3(ZnO)0.5 thin films, which were deposited by radio-frequency magnetron sputtering process, was investigated using X-ray photoelectron spectroscopy and O K-edge X-ray absorption spectroscopy. The overall features of the valence and conduction bands were analyzed by comparing with the spectra of Ga2O3, In2O3, and ZnO films. The valence and conduction band edges are mainly composed of O 2p and In 5sp states, respectively. The bandgap of the films determined by spectroscopic ellipsometry was approximately 3.2 eV. Further, it is found that the introduction of oxygen gas during the sputter-deposition does not induce significant variations in the chemical states and band structure. | - |
dc.format.extent | 3 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Elsevier Sequoia | - |
dc.title | Electronic Structure of amorphous InGaO3(ZnO)0.5 Thin Films | - |
dc.type | Article | - |
dc.publisher.location | 스위스 | - |
dc.identifier.doi | 10.1016/j.tsf.2009.01.156 | - |
dc.identifier.scopusid | 2-s2.0-71649105231 | - |
dc.identifier.wosid | 000272733200013 | - |
dc.identifier.bibliographicCitation | Thin Solid Films, v.518, no. 4, pp 1079 - 1081 | - |
dc.citation.title | Thin Solid Films | - |
dc.citation.volume | 518 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1079 | - |
dc.citation.endPage | 1081 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | CARRIER TRANSPORT | - |
dc.subject.keywordAuthor | InGaZnO | - |
dc.subject.keywordAuthor | Transparent conducting oxide | - |
dc.subject.keywordAuthor | X-ray photoelectron spectroscopy | - |
dc.subject.keywordAuthor | X-ray absorption spectroscopy | - |
dc.identifier.url | http://www.sciencedirect.com./science/article/pii/S0040609009002892 | - |
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