Thermal dissociation of CO molecules and carbon incorporation on the Si(111)-(7 x 7) surface
DC Field | Value | Language |
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dc.contributor.author | Seo, Eonmi | - |
dc.contributor.author | Eom, Daejin | - |
dc.contributor.author | Shin, Eun-Ha | - |
dc.contributor.author | Kim, Hanchul | - |
dc.contributor.author | Koo, Ja-Yong | - |
dc.date.available | 2021-02-22T05:24:29Z | - |
dc.date.issued | 2020-06 | - |
dc.identifier.issn | 0039-6028 | - |
dc.identifier.issn | 1879-2758 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/1458 | - |
dc.description.abstract | Incorporation of carbon (C) atoms in the Si(111)-(7 x 7) surface is investigated by using scanning tunneling microscopy and density-functional theory calculations. C atoms are supplied through thermal dissociation of CO molecules adsorbed on the Si(111)-(7 x 7) surface. One C atom can be incorporated substitutionally below the Si adatoms of the (7 x 7) structure. However, the stable (7 x 7) surface can accommodate only a very small amount of C atoms and the surplus C atoms are swept away to the step edges in the form of silicon-carbon clusters, restoring the clean Si(111)-(7 x 7) structure on the flat terrace. In contrast to the B-induced root 3 x root 3 reconstruction, high density C atoms do not induce a single crystalline root 3 x root 3 reconstruction over a wide area of Si(111). | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER | - |
dc.title | Thermal dissociation of CO molecules and carbon incorporation on the Si(111)-(7 x 7) surface | - |
dc.type | Article | - |
dc.publisher.location | 네델란드 | - |
dc.identifier.doi | 10.1016/j.susc.2020.121589 | - |
dc.identifier.scopusid | 2-s2.0-85079552787 | - |
dc.identifier.wosid | 000537069400007 | - |
dc.identifier.bibliographicCitation | SURFACE SCIENCE, v.696 | - |
dc.citation.title | SURFACE SCIENCE | - |
dc.citation.volume | 696 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | DECOMPOSITION | - |
dc.subject.keywordPlus | ADSORPTION | - |
dc.subject.keywordAuthor | Scanning tunneling microscopy | - |
dc.subject.keywordAuthor | Ab initio calculation | - |
dc.subject.keywordAuthor | Carbon | - |
dc.subject.keywordAuthor | Incorporation | - |
dc.subject.keywordAuthor | Si(111)-(7 x 7) surface | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/abs/pii/S0039602819309173?via%3Dihub | - |
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