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Device Characteristics of Inverted Red Colloidal Quantum-Dot Light-Emitting Diodes Depending on Hole Transport Layers

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dc.contributor.authorLee, Donggu-
dc.contributor.authorLim, Jaehoon-
dc.contributor.authorPark, Myeongjin-
dc.contributor.authorKang, Chan-Mo-
dc.contributor.authorLee, Hyunkoo-
dc.date.accessioned2022-04-19T09:22:40Z-
dc.date.available2022-04-19T09:22:40Z-
dc.date.issued2021-05-
dc.identifier.issn1947-2935-
dc.identifier.issn1947-2943-
dc.identifier.urihttps://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/146627-
dc.description.abstractWe investigated the dependence of the device characteristics of inverted red colloidal quantum dot light-emitting diodes on the hole transport layer. Three different hole transport materials, 4,4'-bis(carbazole-9-yl)biphenyl, 4,4,'4 ''-tri(N-carbazolyl)triphenylamine, N, N'-bis(naphthalen-1-yl)-N, N-bis(phynyl)-2,2'-dimethylbenzidine, and six different hole transport layer structures were used for comparing the devices' performances. The turn-on voltage of the devices was dominated by the energy level difference between the lowest unoccupied molecular orbital of the hole-injection layer (molybdenum trioxide) and the highest occupied molecular orbital of the adjacent hole transport material. The hole mobility as well as the energy level difference between the valence band of the quantum dot and the highest occupied molecular orbital of the adjacent hole transport material was significant factors for high luminance and efficiency. Among the considered devices with six different hole transport layer structures, the device with a single 4,4'-bis(carbazole-9-yl)biphenyl layer as a hole transport layer exhibited the best performance, with a peak efficiency of 5.56% at similar to 10 mA/cm(2). All of the devices exhibited nearly the same main emission peak at similar to 641 nm and a narrow full-width-half-maximum of similar to 34 nm, and their International Commission on Illumination 1931 color coordinates were very deep red, nearly the same as the BT.2020 red color coordinate of (0.708, 0.292).-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.titleDevice Characteristics of Inverted Red Colloidal Quantum-Dot Light-Emitting Diodes Depending on Hole Transport Layers-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1166/sam.2021.3979-
dc.identifier.wosid000675845100021-
dc.identifier.bibliographicCitationSCIENCE OF ADVANCED MATERIALS, v.13, no.5, pp 917 - 921-
dc.citation.titleSCIENCE OF ADVANCED MATERIALS-
dc.citation.volume13-
dc.citation.number5-
dc.citation.startPage917-
dc.citation.endPage921-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusFULL-COLOR-
dc.subject.keywordPlusHIGHLY EFFICIENT-
dc.subject.keywordPlusINJECTION-
dc.subject.keywordAuthorQuantum Dots-
dc.subject.keywordAuthorQuantum Dot Light-Emitting Diodes-
dc.subject.keywordAuthorInverted Structure-
dc.subject.keywordAuthorHole Transport Layer-
dc.subject.keywordAuthorQLED-
dc.identifier.urlhttps://www.ingentaconnect.com/content/asp/sam/2021/00000013/00000005/art00021;jsessionid=7bh4f2g070qso.x-ic-live-02-
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첨단소재·전자융합공학부 (지능형전자시스템전공)
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