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Device Characteristics of Top-Emitting Organic Light-Emitting Diodes Depending on Anode Materials for CMOS-Based OLED Microdisplays

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dc.contributor.authorLee, Hyunkoo-
dc.contributor.authorCho, Hyunsu-
dc.contributor.authorByun, Chun-Won-
dc.contributor.authorKang, Chan-Mo-
dc.contributor.authorHan, Jun-Han-
dc.contributor.authorLee, Jeong-Ik-
dc.contributor.authorKim, Hokwon-
dc.contributor.authorLee, Jeong Hwan-
dc.contributor.authorKim, Minseok-
dc.contributor.authorCho, Nam Sung-
dc.date.accessioned2022-04-19T09:31:24Z-
dc.date.available2022-04-19T09:31:24Z-
dc.date.issued2018-12-
dc.identifier.issn1943-0655-
dc.identifier.issn1943-0647-
dc.identifier.urihttps://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/146906-
dc.description.abstractWe investigated the optical reflectance, surface roughness, and sheet resistance of aluminum (AD/titanium nitride (TiN), titanium (Ti), and tungsten (W) layers on Si substrates, which are available in the CMOS foundry, for organic light-emitting diode (OLED) microdisplays. The devices with different metal anode layers exhibited different hole-injection properties and OLED performances, owing to the different optical and electrical properties of metal anode layers. Based on the OLED characteristics, the Al/TiN layer was selected as an anode layer for OLED microdisplays. A green monochromatic OLED microdisplay panel was designed and implemented using the 0.11-mu m CMOS process. The density of pixels was similar to 2 351 pixels per inch and the panel's active area was 0.7 in in diagonal. The resolution of the panel was 1 280 x 3 x 1 024, corresponding to SXGA. The panel was successfully operated, and the maximal luminance was -460 cd/m(2).-
dc.language영어-
dc.language.isoENG-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleDevice Characteristics of Top-Emitting Organic Light-Emitting Diodes Depending on Anode Materials for CMOS-Based OLED Microdisplays-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/JPHOT.2018.2877196-
dc.identifier.scopusid2-s2.0-85055693562-
dc.identifier.wosid000449361800001-
dc.identifier.bibliographicCitationIEEE PHOTONICS JOURNAL, v.10, no.6-
dc.citation.titleIEEE PHOTONICS JOURNAL-
dc.citation.volume10-
dc.citation.number6-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.urlhttps://www.webofscience.com/wos/woscc/full-record/WOS:000449361800001-
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첨단소재·전자융합공학부 (지능형전자시스템전공)
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