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Absorption dichroism of monolayer 1T '-MoTe2 in visible range

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dc.contributor.authorHan, Gang Hee-
dc.contributor.authorKeum, Dong Hoon-
dc.contributor.authorZhao, Jiong-
dc.contributor.authorShin, Bong Gyu-
dc.contributor.authorSong, Seunghyun-
dc.contributor.authorBae, Jung Jun-
dc.contributor.authorLee, Jubok-
dc.contributor.authorHokim, Jung Ho-
dc.contributor.authorKim, Hyun-
dc.contributor.authorMoon, Byoung Hee-
dc.contributor.authorLee, Young Hee-
dc.date.accessioned2022-04-19T09:46:46Z-
dc.date.available2022-04-19T09:46:46Z-
dc.date.issued2016-09-
dc.identifier.issn2053-1583-
dc.identifier.issn2053-1583-
dc.identifier.urihttps://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147038-
dc.description.abstractAmong various transition metal dichalcogenides, MoTe2 has drawn attention due to its capability of robust phase engineering between semiconducting (2H) and semi-metallic distorted octahedral (1T') phase. In particular, 1T'-MoTe2 has been predicted to have intriguing physics such as quantum spin Hall. insulator, large magnetoresistance, and superconductivity. Recent progress showed weak antilocalization behavior in 1T'-MoTe2 which is the one of representative characteristics in topological insulator. Here, we grow centimeter-scale monolayer 1T'-MoTe2 on SiO2/Si substrate via chemical vapordeposition and demonstrate dichroism in visible range. Ribbon-like 1T'-MoTe2 flakes were initially nucleated randomly on SiO2 substrate and at a later stage merged to form a continuous monolayer film over the entire substrate. Each flake revealed one dimensional Mo-Mo dimerization feature and anisotropic absorption behavior in visible range (400-600 nm). This allowed us to detect the grain boundary due to stark contrast difference among flakes in different orientations.-
dc.format.extent6-
dc.language영어-
dc.language.isoENG-
dc.publisherIOP PUBLISHING LTD-
dc.titleAbsorption dichroism of monolayer 1T '-MoTe2 in visible range-
dc.typeArticle-
dc.publisher.location영국-
dc.identifier.doi10.1088/2053-1583/3/3/031010-
dc.identifier.scopusid2-s2.0-84992322870-
dc.identifier.wosid000384099700001-
dc.identifier.bibliographicCitation2D MATERIALS, v.3, no.3, pp 1 - 6-
dc.citation.title2D MATERIALS-
dc.citation.volume3-
dc.citation.number3-
dc.citation.startPage1-
dc.citation.endPage6-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusFEW-LAYER MOTE2-
dc.subject.keywordPlusTRANSITION-METAL DICHALCOGENIDES-
dc.subject.keywordPlusPHASE-TRANSITION-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusTUNGSTEN DITELLURIDE-
dc.subject.keywordPlusBAND-GAP-
dc.subject.keywordPlusSUPERCONDUCTIVITY-
dc.subject.keywordPlusCRYSTALS-
dc.subject.keywordPlusSTRAIN-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordAuthortransition metal dichalcogenides-
dc.subject.keywordAuthorMoTe2-
dc.subject.keywordAuthorchemical vapor deposition-
dc.subject.keywordAuthorabsorption dichroism-
dc.identifier.urlhttps://iopscience.iop.org/article/10.1088/2053-1583/3/3/031010-
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첨단소재·전자융합공학부 (지능형전자시스템전공)
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