Phase-Engineered Synthesis of Centimeter-Scale 1T′- and 2H-Molybdenum Ditelluride Thin Films
DC Field | Value | Language |
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dc.contributor.author | Park, Jin Cheol | - |
dc.contributor.author | Yun, Seok Joon | - |
dc.contributor.author | Kim, Hyun | - |
dc.contributor.author | Park, Ji-Hoon | - |
dc.contributor.author | Chae, Sang Hoon | - |
dc.contributor.author | An, Sung-Jin | - |
dc.contributor.author | Kim, Jeong-Gyun | - |
dc.contributor.author | Kim, Soo Min | - |
dc.contributor.author | Kim, Ki Kang | - |
dc.contributor.author | Lee, Young Hee | - |
dc.date.accessioned | 2022-04-19T09:51:14Z | - |
dc.date.available | 2022-04-19T09:51:14Z | - |
dc.date.issued | 2015-06 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.issn | 1936-086X | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147165 | - |
dc.description.abstract | We report the synthesis of centimeter-scale, uniform 1T'- and 2H-MoTe2 thin films via the tellurization of Mo thin films. 1T'-MoTe2 was initially grown and converted gradually to 2H-MoTe2 over a prolonged growth time under a Te atmosphere. Maintaining excessive Te was essential for obtaining the stable stoichionnetric 2H-MoTe2 phase. Further annealing under a lower partial pressure of Te at the same temperature, followed by a rapid quenching, led to the reverse phase transition from 2H-MoTe2 to 1T'-MoTe2. The orientation of the 2H-MoTe2 film was determined by the tellurization rate. Slow tellurization was the key for obtaining a highly oriented 2H-MoTe2 film over the entire area, while fast tellurization led to a 2H-MoTe2 film with a randomly oriented c-axis. | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | American Chemical Society | - |
dc.title | Phase-Engineered Synthesis of Centimeter-Scale 1T′- and 2H-Molybdenum Ditelluride Thin Films | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1021/acsnano.5b02511 | - |
dc.identifier.scopusid | 2-s2.0-84934990143 | - |
dc.identifier.wosid | 000356988500097 | - |
dc.identifier.bibliographicCitation | ACS Nano, v.9, no.6, pp 6548 - 6554 | - |
dc.citation.title | ACS Nano | - |
dc.citation.volume | 9 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 6548 | - |
dc.citation.endPage | 6554 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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