Synthesis of Centimeter-Scale Monolayer Tungsten Disulfide Film on Gold Foils
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이영희 | - |
dc.contributor.author | 김기강 | - |
dc.contributor.author | 채상훈 | - |
dc.contributor.author | 윤석준 | - |
dc.contributor.author | 이주송 | - |
dc.contributor.author | 김수민 | - |
dc.date.accessioned | 2022-04-19T09:51:32Z | - |
dc.date.available | 2022-04-19T09:51:32Z | - |
dc.date.issued | 2015-05 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.issn | 1936-086X | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147175 | - |
dc.description.abstract | We report the synthesis of centimeter-scale monolayer WS2 on gold foil by chemical vapor deposition. The limited tungsten and sulfur solubility in gold foil allows monolayer WS2 film growth on gold surface. To ensure the coverage uniformity of monolayer WS2 film, the tungsten source-coated substrate was placed in parallel with Au foil under hydrogen sulfide atmosphere. The high growth temperature near 935 degrees C helps to increase a domain size up to 420 mu m. Gold foil is reused for the repeatable growth after bubbling transfer. The WS2-based field effect transistor reveals an electron mobility of 20 cm(2) V-1 s(-1) with high on-off ratio of similar to 10(8) at room temperature, which is the highest reported value from previous reports of CVD-grown WS2 samples. The on-off ratio of integrated multiple FETs on the large area WS2 film on SiO2 (300 nm)/Si substrate shows within the same order, implying reasonable uniformity of WS2 FET device characteristics over a large area of 3 x 1.5 cm(2). | - |
dc.format.extent | 10 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | American Chemical Society | - |
dc.title | Synthesis of Centimeter-Scale Monolayer Tungsten Disulfide Film on Gold Foils | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1021/acsnano.5b01529 | - |
dc.identifier.scopusid | 2-s2.0-84930667045 | - |
dc.identifier.wosid | 000355383000088 | - |
dc.identifier.bibliographicCitation | ACS Nano, v.9, no.5, pp 5510 - 5519 | - |
dc.citation.title | ACS Nano | - |
dc.citation.volume | 9 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 5510 | - |
dc.citation.endPage | 5519 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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