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Improvement of Power Efficiency in Phosphorescent White Organic Light-Emitting Diodes Using p-Doped Hole Transport Layer

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dc.contributor.authorLee, H-
dc.contributor.authorKim, JY-
dc.contributor.authorLee, C-
dc.date.accessioned2022-04-19T10:26:43Z-
dc.date.available2022-04-19T10:26:43Z-
dc.date.issued2012-01-
dc.identifier.issn1110-662X-
dc.identifier.issn1687-529X-
dc.identifier.urihttps://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147686-
dc.description.abstractWe investigated the optical and electrical properties of molybdenum trioxide-(MoO(3)-) doped (1,1-bis[(di-4-tolylamino) phenyl]cyclohexane) (TAPC) films with different doping concentrations. Based on our results, we have fabricated white organic light emitting diodes (WOLEDs) with multi-emitting layer structures that consist of 1,3-bis(9-carbazolyl) benzene as a host and three phosphorescent dopants: iridium(III) bis[4,6-difluorophenyl]-pyridinato-N, C(2)'] picolinate as a blue dopant, bis(2-phenylbenxothiozolato-N, C(2)') iridium(III) (acetylacetonate) as an orange dopant, and bis(1-phenylisoquinoline) (acetylacetonate) iridium(III) as a red dopant. We improved the power efficiency and decreased driving voltage of WOLEDs by employing a MoO(3)-doped TAPC layer as a hole transport layer. The MoO(3)-doped TAPC layer lowers the driving voltage by about 1.2V and increases the power efficiency from 6.2 lm . W(-1) to 7.9 lm . W(-1) at 1, 000 cd . m(-2), an approximately 27.4% increase. Furthermore, the WOLED has a high color-rendering index, which is about 86 with the Commission Internationale de l'Eclairage 1931 chromatic coordinates of (0.4303, 0.3893) and correlated color temperature of 3008 K.-
dc.format.extent9-
dc.language영어-
dc.language.isoENG-
dc.publisherHINDAWI PUBLISHING CORPORATION-
dc.titleImprovement of Power Efficiency in Phosphorescent White Organic Light-Emitting Diodes Using p-Doped Hole Transport Layer-
dc.typeArticle-
dc.publisher.location영국-
dc.identifier.doi10.1155/2012/581421-
dc.identifier.scopusid2-s2.0-84863045042-
dc.identifier.wosid000299518400001-
dc.identifier.bibliographicCitationINTERNATIONAL JOURNAL OF PHOTOENERGY, v.2012, pp 1 - 9-
dc.citation.titleINTERNATIONAL JOURNAL OF PHOTOENERGY-
dc.citation.volume2012-
dc.citation.startPage1-
dc.citation.endPage9-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaEnergy & Fuels-
dc.relation.journalResearchAreaOptics-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryEnergy & Fuels-
dc.relation.journalWebOfScienceCategoryOptics-
dc.relation.journalWebOfScienceCategoryPhysics, Atomic, Molecular & Chemical-
dc.identifier.urlhttps://www.hindawi.com/journals/ijp/2012/581421/-
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첨단소재·전자융합공학부 (지능형전자시스템전공)
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