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Effects of 1 MeV Electron Beam Irradiation on Multilayer Graphene Grown on 6H-SiC(0001)

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dc.contributor.authorKim, Ki-Jeong-
dc.contributor.authorChoi, Junghun-
dc.contributor.authorLee, Hangil-
dc.contributor.authorLee, Han-Koo-
dc.contributor.authorKang, Tai-Hee-
dc.contributor.authorHan, Young-Hwan-
dc.contributor.authorLee, Byung-Cheol-
dc.contributor.authorKim, Sehun-
dc.contributor.authorKim, Bongsoo-
dc.date.accessioned2022-04-19T11:03:20Z-
dc.date.available2022-04-19T11:03:20Z-
dc.date.issued2008-08-
dc.identifier.issn1932-7447-
dc.identifier.issn1932-7455-
dc.identifier.urihttps://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/148180-
dc.description.abstractGraphene layers grown on 6H-SiC(0001) were irradiated with 1 MeV electron beam to functionalize its surface. A surface analysis using atomic force microscopy, the near edge X-ray adsorption fine structure spectra of C K-edge, and photoemission spectroscopy suggests that the electron beam irradiation in ambient condition can induce oxidation of the graphene layer.-
dc.format.extent3-
dc.language영어-
dc.language.isoENG-
dc.publisherACS-
dc.titleEffects of 1 MeV Electron Beam Irradiation on Multilayer Graphene Grown on 6H-SiC(0001)-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1021/jp805141e-
dc.identifier.scopusid2-s2.0-51749084221-
dc.identifier.wosid000258633600003-
dc.identifier.bibliographicCitationJOURNAL OF PHYSICAL CHEMISTRY C, v.112, no.34, pp 13062 - 13064-
dc.citation.titleJOURNAL OF PHYSICAL CHEMISTRY C-
dc.citation.volume112-
dc.citation.number34-
dc.citation.startPage13062-
dc.citation.endPage13064-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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