Room-temperature growth of Mg on Si(111): stepwise versus continuous deposition
DC Field | Value | Language |
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dc.contributor.author | Lee, Dohyun | - |
dc.contributor.author | Lee, Geunseop | - |
dc.contributor.author | Kim, Sehun | - |
dc.contributor.author | Hwang, Chanyong | - |
dc.contributor.author | Koo, Ja-Yong | - |
dc.contributor.author | Lee, Hangil | - |
dc.date.accessioned | 2022-04-19T11:08:09Z | - |
dc.date.available | 2022-04-19T11:08:09Z | - |
dc.date.issued | 2007-07 | - |
dc.identifier.issn | 0953-8984 | - |
dc.identifier.issn | 1361-648X | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/148398 | - |
dc.description.abstract | Using low- energy electron diffraction and scanning tunnelling microscopy, we studied the formation of Mg silicide and metallic Mg islands on a Si( 111)- 7 x 7 surface at room temperature as a function of Mg coverage. We found that the mechanism by which Mg islands grew on the Si( 111)- 7 x 7 surface, and the morphology of the islands that formed, depended on whether theMg deposition was performed in a stepwise or continuous manner. When Mg was deposited in a stepwise manner, with 1 h between deposition events, an amorphous Mg silicide overlayer formed on the Si( 111)- 7 x 7 surface during the initial stage of deposition ( up to 2.0 ML Mg coverage), as shown by the observation of delta 7 x 7 and 1 x 1 low- energy electron diffraction patterns. Upon further stepwise Mg deposition, round-shaped Mg islands grew on the amorphous Mg silicide layer, as shown by scanning tunnelling microscopy and the emergence of a 1 x 1 low- energy electron diffraction pattern. If, on the other hand, the Mg was deposited continuously in a single step, hexagonal Mg islands formed on the flat Mg silicide layers, and a ( 2/3 root 3 x 2/3 root 3) R30 degrees. and 1 x 1 mixed phase was observed. Moreover, using scanning tunnelling spectroscopy, we confirmed the semiconducting and metallic nature of the Mg silicide layer and hexagonal Mg is | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Institute of Physics Publishing | - |
dc.title | Room-temperature growth of Mg on Si(111): stepwise versus continuous deposition | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1088/0953-8984/19/26/266004 | - |
dc.identifier.scopusid | 2-s2.0-34250742008 | - |
dc.identifier.wosid | 000247400700004 | - |
dc.identifier.bibliographicCitation | Journal of Physics Condensed Matter, v.19, no.26 | - |
dc.citation.title | Journal of Physics Condensed Matter | - |
dc.citation.volume | 19 | - |
dc.citation.number | 26 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/0953-8984/19/26/266004 | - |
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