Magnetic and electronic properties of transition metal doped beta-SiC - a diluted magnetic semiconductor
DC Field | Value | Language |
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dc.contributor.author | Kim, Han Chul | - |
dc.contributor.author | Kim, Yoon-Suk | - |
dc.contributor.author | Chung, Yong-Chae | - |
dc.date.accessioned | 2022-04-19T11:25:38Z | - |
dc.date.available | 2022-04-19T11:25:38Z | - |
dc.date.issued | 2006-06 | - |
dc.identifier.issn | 1013-9826 | - |
dc.identifier.issn | 1662-9795 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/148593 | - |
dc.description.abstract | We used ab initio pseudopotential plane wave methods to study the magnetic and electronic properties of transition-metal doped β-SiC. It is found that the SiC:Cr reveals stable ferromagnetism with permanent magnetic moments as large as 2 μB regardless of substitution site. In addition, the SiC:Crsi is predicted to have good electron mobility and wide spin band-gap of 1.58 eV with the Fermi level at the center of the gap, which is desirable for realizing spintronic devices. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Trans Tech Publications Ltd. | - |
dc.title | Magnetic and electronic properties of transition metal doped beta-SiC - a diluted magnetic semiconductor | - |
dc.title.alternative | Magnetic and electronic properties of transition metal doped beta-SiC - a diluted magnetic semiconductor | - |
dc.type | Article | - |
dc.publisher.location | 스위스 | - |
dc.identifier.scopusid | 2-s2.0-33746218750 | - |
dc.identifier.bibliographicCitation | Key Engineering Materials, v.317-318, no.0, pp 889 - 892 | - |
dc.citation.title | Key Engineering Materials | - |
dc.citation.volume | 317-318 | - |
dc.citation.number | 0 | - |
dc.citation.startPage | 889 | - |
dc.citation.endPage | 892 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.url | https://www.scientific.net/KEM.317-318.889 | - |
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