A new period-doubled modulation on the In/Si(111)4x1 surface induced by defects
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김한철 | - |
dc.contributor.author | Lee, Geunseop | - |
dc.contributor.author | Yu, Sang-Yong | - |
dc.contributor.author | Lee D | - |
dc.contributor.author | Koo, Ja-Yong | - |
dc.date.accessioned | 2022-04-19T11:26:15Z | - |
dc.date.available | 2022-04-19T11:26:15Z | - |
dc.date.issued | 2006-03 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.issn | 1347-4065 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/148622 | - |
dc.description.abstract | We report observations of defect-induced period-doubled (x2) modulations in scanning tunneling microscopy images of the In/Si(111)4 x 1 surface at room temperature. The perturbation is one-dimensional, ranging up to ten lattice constants in the row direction. The modulation is attributed to a perturbation in electronic charge density rather than to a lattice distortion. The defect-induced x2 structure differs from the low-temperature (LT) 4 x 2 observed for the defect-free Surface. First-principle calculations found that the defects stabilize a hypothetical structure with small lattice distortions, whose calculated energy is lower than that of the large lattice-distorted Structure proposed for the 4 x 2-LT phase. This symmetry-broken, defect-induced modulation is extraordinary in that it does not mimic the LT phase observed in the defect-free system. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | A new period-doubled modulation on the In/Si(111)4x1 surface induced by defects | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1143/JJAP.45.2087 | - |
dc.identifier.scopusid | 2-s2.0-33645508364 | - |
dc.identifier.wosid | 000236624100048 | - |
dc.identifier.bibliographicCitation | Japanese Journal of Applied Physics, v.45, no.3B, pp 2087 - 2090 | - |
dc.citation.title | Japanese Journal of Applied Physics | - |
dc.citation.volume | 45 | - |
dc.citation.number | 3B | - |
dc.citation.startPage | 2087 | - |
dc.citation.endPage | 2090 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.45.2087 | - |
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