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Chemically abrupt interface between Ce oxide and Fe films
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, HG | - |
| dc.contributor.author | Lee, D | - |
| dc.contributor.author | Kim, S | - |
| dc.contributor.author | Kim, SG | - |
| dc.contributor.author | Hwang, CY | - |
| dc.date.accessioned | 2022-04-19T11:41:38Z | - |
| dc.date.available | 2022-04-19T11:41:38Z | - |
| dc.date.issued | 2005-12 | - |
| dc.identifier.issn | 0169-4332 | - |
| dc.identifier.issn | 1873-5584 | - |
| dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/148707 | - |
| dc.description.abstract | A chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation of an Fe film followed by deposition of Cc metal. Once a Cc oxide layer is formed on top of Fe, it acts a passivation barrier for oxygen diffusion. Further deposition of Cc metal followed by its oxidation preserve the abrupt interface between Ce oxide and Fe films. The Fe and Cc oxidation states have been monitored at each stage using X-ray photoelectron spectroscopy. (c) 2005 Elsevier B.V. All rights reserved. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | ELSEVIER SCIENCE BV | - |
| dc.title | Chemically abrupt interface between Ce oxide and Fe films | - |
| dc.type | Article | - |
| dc.publisher.location | 네델란드 | - |
| dc.identifier.doi | 10.1016/j.apsusc.2005.03.129 | - |
| dc.identifier.scopusid | 2-s2.0-27944463661 | - |
| dc.identifier.wosid | 000233985900003 | - |
| dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.252, no.5, pp 1202 - 1205 | - |
| dc.citation.title | APPLIED SURFACE SCIENCE | - |
| dc.citation.volume | 252 | - |
| dc.citation.number | 5 | - |
| dc.citation.startPage | 1202 | - |
| dc.citation.endPage | 1205 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
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