Switching characteristics of magnetic tunnel junction with amorphous CoFeSiB free layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hwang, J. Y. | - |
dc.contributor.author | Kim, S. S. | - |
dc.contributor.author | Kim, M. Y. | - |
dc.contributor.author | Rhee, J. R. | - |
dc.contributor.author | Chun, B. S. | - |
dc.contributor.author | Kim, Y. K. | - |
dc.contributor.author | Kim, T. W. | - |
dc.contributor.author | Lee, H. B. | - |
dc.contributor.author | Yu, S. C. | - |
dc.date.available | 2021-02-22T15:18:12Z | - |
dc.date.issued | 2006-09 | - |
dc.identifier.issn | 0304-8853 | - |
dc.identifier.issn | 1873-4766 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/15076 | - |
dc.description.abstract | The switching characteristics of magnetic tunnel junctions (MTJs) comprising amorphous ferromagnetic CoFeSiB free layer have been investigated. CoFeSiB was used for the free layer to enhance the switching characteristics. The typical junction structure was Si/SiO2/Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/CoFeSiB (t)/Ru 60 (in nm). CoFeSiB has low saturation magnetization (M-s) of 560 emu/cm(3) and high anisotropy constant (K-u) of 2,800 erg/cm(3). These properties caused low coercivity (H-c) and high sensitivity in MTJs. It was also confirmed in submicrometer-sized elements by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. By increasing CoFeSiB free layer thickness, the switching characteristics became worse due to increase of the demagnetization field. (C) 2006 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Switching characteristics of magnetic tunnel junction with amorphous CoFeSiB free layer | - |
dc.type | Article | - |
dc.publisher.location | 네델란드 | - |
dc.identifier.doi | 10.1016/j.jmmm.2006.02.017 | - |
dc.identifier.scopusid | 2-s2.0-33646867206 | - |
dc.identifier.wosid | 000207211700091 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.304, no.1, pp E276 - E278 | - |
dc.citation.title | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | - |
dc.citation.volume | 304 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | E276 | - |
dc.citation.endPage | E278 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordAuthor | Magnetic tunnel junction | - |
dc.subject.keywordAuthor | Switching characteristics | - |
dc.subject.keywordAuthor | Amorphous magnetic materials | - |
dc.subject.keywordAuthor | Coercivity | - |
dc.subject.keywordAuthor | CoFeSiB | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Sookmyung Women's University. Cheongpa-ro 47-gil 100 (Cheongpa-dong 2ga), Yongsan-gu, Seoul, 04310, Korea02-710-9127
Copyright©Sookmyung Women's University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.