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Magnetization switching of NiFeSiB free layers for magnetic tunnel junctions
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chun, B. S. | - |
| dc.contributor.author | Ko, S. P. | - |
| dc.contributor.author | Oh, B. S. | - |
| dc.contributor.author | Hwang, J. Y. | - |
| dc.contributor.author | Rhee, J. R. | - |
| dc.contributor.author | Kim, T. W. | - |
| dc.contributor.author | Saito, S. | - |
| dc.contributor.author | Yoshimura, S. | - |
| dc.contributor.author | Tsunoda, M. | - |
| dc.contributor.author | Takahashi, M. | - |
| dc.contributor.author | Kim, Y. K. | - |
| dc.date.available | 2021-02-22T15:18:14Z | - |
| dc.date.issued | 2006-09 | - |
| dc.identifier.issn | 0304-8853 | - |
| dc.identifier.issn | 1873-4766 | - |
| dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/15077 | - |
| dc.description.abstract | Ferromagnetic amorphous Ni16Fe62Si8B14 layer have been studied as free layers for magnetic tunnel junctions (MTJs) to enhance cell switching performance. Traditional MTJ free layer materials such as NiFe and CoFe were also prepared for switching comparison purposes. Both NiFeSiB and NiFe resulted in an order of magnitude smaller switching fields compared to the CoFe. The switching field was further reduced for the synthetic antiferromagnetic NiFeSiB free layered structure. (C) 2006 Elsevier B.V. All rights reserved. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | ELSEVIER SCIENCE BV | - |
| dc.title | Magnetization switching of NiFeSiB free layers for magnetic tunnel junctions | - |
| dc.type | Article | - |
| dc.publisher.location | 네델란드 | - |
| dc.identifier.doi | 10.1016/j.jmmm.2006.02.052 | - |
| dc.identifier.scopusid | 2-s2.0-33646887032 | - |
| dc.identifier.wosid | 000207211700085 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.304, no.1, pp E258 - E260 | - |
| dc.citation.title | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | - |
| dc.citation.volume | 304 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | E258 | - |
| dc.citation.endPage | E260 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordAuthor | Magnetic tunnel junctions | - |
| dc.subject.keywordAuthor | Amorphous ferromagnet | - |
| dc.subject.keywordAuthor | NiFeSiB film | - |
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