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Junction area dependence of tunneling magnetoresistance

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dc.contributor.authorLee, SS-
dc.contributor.authorWang, SX-
dc.contributor.authorPark, CM-
dc.contributor.authorRhee, JR-
dc.contributor.authorYoon, CS-
dc.contributor.authorChang, PJ-
dc.contributor.authorKim, CK-
dc.date.available2021-02-22T16:32:12Z-
dc.date.issued2002-02-
dc.identifier.issn0304-8853-
dc.identifier.issn1873-4766-
dc.identifier.urihttps://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/16439-
dc.description.abstractSpin dependent tunneling devices Ta/NiFe/Ta/NiFe/FeMn/NiFe/CoFe/Al2O3/CoFe/NiFe/Al with in-situ naturally oxidized Al2O3 barrier were fabricated using ion beam deposition and DC sputtering. The as-deposited and post-annealing junctions showed tunneling magneto resistance of 8-18% with resistance-area products (R x A) of 340-60 Omega mum(2), which were dependent on the junction area (81-4 mum(2)). (C) 2002 Elsevier Science B.V. All rights reserved.-
dc.format.extent3-
dc.language영어-
dc.language.isoENG-
dc.publisherELSEVIER SCIENCE BV-
dc.titleJunction area dependence of tunneling magnetoresistance-
dc.typeArticle-
dc.publisher.location네델란드-
dc.identifier.doi10.1016/S0304-8853(01)00590-X-
dc.identifier.scopusid2-s2.0-0036465362-
dc.identifier.wosid000175187300042-
dc.identifier.bibliographicCitationJOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.239, no.1-3, pp 129 - 131-
dc.citation.titleJOURNAL OF MAGNETISM AND MAGNETIC MATERIALS-
dc.citation.volume239-
dc.citation.number1-3-
dc.citation.startPage129-
dc.citation.endPage131-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusOXIDATION-
dc.subject.keywordAuthorspin dependent tunneling-
dc.subject.keywordAuthornatural oxidation-
dc.subject.keywordAuthortunneling magnetoresistance-
dc.subject.keywordAuthorresistance-area products (R x A)-
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