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Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO2 films for dynamic random-access memory capacitors (vol 13 , pg 16969 , 2025)
- Kim, Tae Kyun;
- Seo, Haengha;
- Lim, Junil;
- Paik, Heewon;
- Shin, Jonghoon;
- ... Kwon, Dae Seon;
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Correction for ‘Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO2 films for dynamic random-access memory capacitors’ by Tae Kyun Kim et al., J. Mater. Chem. C, 2025, 13, 16969–16980, https://doi.org/10.1039/D5TC01401H.
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- Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO2 films for dynamic random-access memory capacitors (vol 13 , pg 16969 , 2025)
- 저자
- Kim, Tae Kyun; Seo, Haengha; Lim, Junil; Paik, Heewon; Shin, Jonghoon; Song, Haewon; Kwon, Dae Seon; Hwang, Cheol Seong
- 발행일
- 2026-03
- 유형
- Correction
- 권
- 14
- 호
- 10
- 페이지
- 4170 ~ 4171