Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO2 films for dynamic random-access memory capacitors (vol 13 , pg 16969 , 2025)
  • Kim, Tae Kyun
  • Seo, Haengha
  • Lim, Junil
  • Paik, Heewon
  • Shin, Jonghoon
  • ... Kwon, Dae Seon
  • 외 2명
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Correction for ‘Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO2 films for dynamic random-access memory capacitors’ by Tae Kyun Kim et al., J. Mater. Chem. C, 2025, 13, 16969–16980, https://doi.org/10.1039/D5TC01401H.

제목
Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO2 films for dynamic random-access memory capacitors (vol 13 , pg 16969 , 2025)
저자
Kim, Tae KyunSeo, HaenghaLim, JunilPaik, HeewonShin, JonghoonSong, HaewonKwon, Dae SeonHwang, Cheol Seong
DOI
10.1039/d6tc90030e
발행일
2026-03
유형
Correction
저널명
Journal of Materials Chemistry C
14
10
페이지
4170 ~ 4171