권대선 프로필 사진

권대선

KWON, Dae Seon

대학

공과대학

화공생명공학부

ORCID

자료 필터

자료유형

발행연도

2025 ~ 2026
2025 2026

키워드

언어

전체 13건 중 1번부터 10번까지의 결과를 표시합니다.

2026
Article

Electrode-dependent interfacial reactions and Ru loss suppression during ozone-based atomic layer deposition of TiO2 on Ru- and RuO2-based electrodes

  • Song, Haewon ; 
  • Shin, Jonghoon ; 
  • Kim, Tae Kyun ; 
  • Paik, Heewon ; 
  • Kwon, Dae Seon ; 
  • 외 1명
  • 2026-08
  • Journal of Materials Chemistry C
  • ROYAL SOC CHEMISTRY
Article

Heterogeneous Local-Epitaxial Growth Behavior of Ultrathin HfO2/Al-Doped TiO2 Bilayer Dielectrics for Dynamic Random-Access Memory Capacitor Applications

  • Kwon, Dae Seon ; 
  • Ye, Kun Hee ; 
  • Lee, In Soo ; 
  • Shin, Jonghoon ; 
  • Lim, Junil ; 
  • 외 7명
  • 2026-06
  • ACS Applied Materials & Interfaces
  • AMER CHEMICAL SOC
Article

Identification and quantification of ferroelectric phases in HfZrOx thin films using the precession electron diffraction technique

  • Parida, Pradyumna Kumar ; 
  • Richard, Olivier ; 
  • Kwon, Dae Seon ; 
  • De, Gourab ; 
  • Popovici, Mihaela Ioana ; 
  • 외 3명
  • 2026-06
  • Applied Surface Science
  • ELSEVIER
Article

Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO2 films for dynamic random-access memory capacitors (vol 13 , pg 16969 , 2025)

  • Kim, Tae Kyun ; 
  • Seo, Haengha ; 
  • Lim, Junil ; 
  • Paik, Heewon ; 
  • Shin, Jonghoon ; 
  • ... Kwon, Dae Seon ; 
  • 외 2명
  • 2026-03
  • Journal of Materials Chemistry C
  • ROYAL SOC CHEMISTRY
Article

Al-Doped Rutile TiO2 with Y2O3-ZrO2 Stacks Achieving Thin Thickness and Low Leakage for Dynamic Random-Access Memory Capacitors

  • Kim, Tae Kyun ; 
  • Paik, Heewon ; 
  • Shin, Jonghoon ; 
  • Song, Haewon ; 
  • Kwon, Dae Seon ; 
  • 외 1명
  • 2026-03
  • ACS APPLIED ELECTRONIC MATERIALS
  • AMER CHEMICAL SOC
Article

Improved Ferroelectric Properties of Hafnium Zirconium Oxide Solid Solution and Nanolaminate via Functional Capping Layer Engineering for Low-Power Memory Applications

  • Kim, Hyun-Cheol ; 
  • Popovici, Mihaela Ioana ; 
  • De, Gourab ; 
  • Kwon, Dae Seon ; 
  • Kim, Gwon ; 
  • 외 5명
  • 2026-02
  • ACS APPLIED ENERGY MATERIALS
  • American Chemical Society
Article

Seed layer effect on the phase evolution of the La-doped hafnium zirconium oxide with back-end-of-line compatibility

  • Kwon, Dae Seon ; 
  • Bizindavyi, Jasper ; 
  • Parida, Pradyumna Kumar ; 
  • De, Gourab ; 
  • Kim, Hyun-Cheol ; 
  • 외 8명
  • 2026-02
  • Applied Surface Science
  • Elsevier B.V.
2025
Article

The leakage current suppression mechanism in a RuO2/SrTiO3/Ru capacitor induced by introduction of an ultra-thin GeO2 interfacial layer at the bottom interface (vol 13, pg 21347, 2025)

  • Paik, Heewon ; 
  • Kim, Dohyun ; 
  • Lim, Junil ; 
  • Seo, Haengha ; 
  • Kim, Tae Kyun ; 
  • ... Kwon, Dae Seon ; 
  • 외 6명
  • 2025-11
  • Journal of Materials Chemistry C
  • ROYAL SOC CHEMISTRY
Article

Wake-Up Free Hf0.5Zr0.5O2 Capacitors with MoOx Seed for Ferroelectric Memory Applications

  • Popovici, Mihaela Ioana ; 
  • Bizindavyi, Jasper ; 
  • Kwon, Dae-seon ; 
  • Kim, Hyun-cheol ; 
  • Kim, Gwon ; 
  • 외 7명
  • 2025-11
  • 2025 IEEE International Symposium on Applications of Ferroelectrics (ISAF)
  • Institute of Electrical and Electronics Engineers Inc.
Article

Enhanced crystallization and dielectric properties of atomic layer deposited SrTiO3 thin films on Ru electrode by inserting GeO2 interfacial layer

  • Paik, Heewon ; 
  • Lim, Junil ; 
  • Seo, Haengha ; 
  • Kim, Tae Kyun ; 
  • Shin, Jonghoon ; 
  • ... Kwon, Dae Seon ; 
  • 외 4명
  • 2025-09
  • Materials Horizons
  • ROYAL SOC CHEMISTRY
12 끝