상세 보기
- Parida, Pradyumna Kumar;
- Richard, Olivier;
- Kwon, Dae Seon;
- De, Gourab;
- Popovici, Mihaela Ioana;
- 외 3명
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0초록
La-doped hafnium zirconium oxide thin film is a promising candidate for future ferroelectric device applications. This study illustrates the high-spatial resolution crystal orientation and phase mapping in HfZrOx (HZO) thin films grown on different seed layers, namely TiO2, ZrO2 and WO3 using precession electron diffraction technique (PED). First, the methodology adopted for reliable HZO phase identification and quantification is discussed. Additionally, the PED analysis indicated that HZO films grown on TiO2 or ZrO2 seed layers preferably induce the formation of ferroelectric orthorhombic phase. However, the ferroelectric grain size was found to be the smallest with ZrO2 seed as compared to TiO2 seed. The WO3 seed layer favored the formation of the antiferroelectric tetragonal phase with larger grain size. Our observation showed, 1 nm thick TiO2 was found to be the most effective seed layer as compared to others in favoring the growth of ferroelectric orthorhombic grains and making it a suitable choice for the designer towards application oriented advanced ferroelectric devices.
키워드
- 제목
- Identification and quantification of ferroelectric phases in HfZrOx thin films using the precession electron diffraction technique
- 저자
- Parida, Pradyumna Kumar; Richard, Olivier; Kwon, Dae Seon; De, Gourab; Popovici, Mihaela Ioana; Favia, Paola; Belmonte, Attilio; Grieten, Eva
- 발행일
- 2026-06
- 유형
- Article
- 권
- 730