상세 보기
자료 필터
자료유형
발행연도
2025 ~ 2026
2025 2026
키워드
언어
전체 12건 중 1번부터 10번까지의 결과를 표시합니다.
2026
Article
Identification and quantification of ferroelectric phases in HfZrOx thin films using the precession electron diffraction technique
- Parida, Pradyumna Kumar ;
- Richard, Olivier ;
- Kwon, Dae Seon ;
- De, Gourab ;
- Popovici, Mihaela Ioana ;
- 외 3명
- 2026-06
- Applied Surface Science
- ELSEVIER
Article
Heterogeneous Local-Epitaxial Growth Behavior of Ultrathin HfO2/Al-Doped TiO2 Bilayer Dielectrics for Dynamic Random-Access Memory Capacitor Applications
- Kwon, Dae Seon ;
- Ye, Kun Hee ;
- Lee, In Soo ;
- Shin, Jonghoon ;
- Lim, Junil ;
- 외 7명
- 2026-06
- ACS Applied Materials and Interfaces
- AMER CHEMICAL SOC
Article
Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO2 films for dynamic random-access memory capacitors (vol 13 , pg 16969 , 2025)
- Kim, Tae Kyun ;
- Seo, Haengha ;
- Lim, Junil ;
- Paik, Heewon ;
- Shin, Jonghoon ;
- ... Kwon, Dae Seon ;
- 외 2명
- 2026-03
- Journal of Materials Chemistry C
- ROYAL SOC CHEMISTRY
Article
Al-Doped Rutile TiO2 with Y2O3-ZrO2 Stacks Achieving Thin Thickness and Low Leakage for Dynamic Random-Access Memory Capacitors
- Kim, Tae Kyun ;
- Paik, Heewon ;
- Shin, Jonghoon ;
- Song, Haewon ;
- Kwon, Dae Seon ;
- 외 1명
- 2026-03
- ACS APPLIED ELECTRONIC MATERIALS
- AMER CHEMICAL SOC
Article
Improved Ferroelectric Properties of Hafnium Zirconium Oxide Solid Solution and Nanolaminate via Functional Capping Layer Engineering for Low-Power Memory Applications
- Kim, Hyun-Cheol ;
- Popovici, Mihaela Ioana ;
- De, Gourab ;
- Kwon, Dae Seon ;
- Kim, Gwon ;
- 외 5명
- 2026-02
- ACS APPLIED ENERGY MATERIALS
- American Chemical Society
Article
Seed layer effect on the phase evolution of the La-doped hafnium zirconium oxide with back-end-of-line compatibility
- Kwon, Dae Seon ;
- Bizindavyi, Jasper ;
- Parida, Pradyumna Kumar ;
- De, Gourab ;
- Kim, Hyun-Cheol ;
- 외 8명
- 2026-02
- Applied Surface Science
- Elsevier B.V.
2025
Article
The leakage current suppression mechanism in a RuO2/SrTiO3/Ru capacitor induced by introduction of an ultra-thin GeO2 interfacial layer at the bottom interface (vol 13, pg 21347, 2025)
- Paik, Heewon ;
- Kim, Dohyun ;
- Lim, Junil ;
- Seo, Haengha ;
- Kim, Tae Kyun ;
- ... Kwon, Dae Seon ;
- 외 6명
- 2025-11
- Journal of Materials Chemistry C
- ROYAL SOC CHEMISTRY
Article
Wake-Up Free Hf0.5Zr0.5O2 Capacitors with MoOx Seed for Ferroelectric Memory Applications
- Popovici, Mihaela Ioana ;
- Bizindavyi, Jasper ;
- Kwon, Dae-seon ;
- Kim, Hyun-Cheol ;
- Kim, Gwon ;
- 외 7명
- 2025-11
- 2025 IEEE International Symposium on Applications of Ferroelectrics (ISAF)
- Institute of Electrical and Electronics Engineers Inc.
Article
Enhanced crystallization and dielectric properties of atomic layer deposited SrTiO3 thin films on Ru electrode by inserting GeO2 interfacial layer
- Paik, Heewon ;
- Lim, Junil ;
- Seo, Haengha ;
- Kim, Tae Kyun ;
- Shin, Jonghoon ;
- ... Kwon, Dae Seon ;
- 외 4명
- 2025-09
- Materials Horizons
- ROYAL SOC CHEMISTRY
Article
Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO2 films for dynamic random-access memory capacitors
- Kim, Tae Kyun ;
- Seo, Haengha ;
- Lim, Junil ;
- Paik, Heewon ;
- Shin, Jonghoon ;
- ... Kwon, Dae Seon ;
- 외 2명
- 2025-08
- Journal of Materials Chemistry C
- ROYAL SOC CHEMISTRY
1