ScholarWorks@Sookmyung Women's University: Ko, Chang Hyun

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Ko, Chang Hyun (고창현)

Engineering (Division of Materials Science and Electr)

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Tel 02-2077-7859
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2D materials:3||metalinsulator transition:3||fieldeffect transistor:2||molybdenum disulfide:2||carrier transport:2||diamond anvil cell:2||vanadium compounds:2||vanadium dioxide:2||photoluminescence:2||ferroelectrics:2||doping effects:2||twodimensional materials:2||MOS2:1||Metalinsulator transition:1||Methane:1||Microelectromechanical systems:1||Microsolid oxide fuel cell (μSOFC)Thin film electrolyteZirconia (ZrO2)PlatinumUltraviolet oxidationPortable energy:1||Natural gas:1||POWER:1||Photon irradiation effects:1||Postdeposition annealing:1||Reactive molecular dynamicsReaxFFVanadium oxideCompositional stability:1||Ruthenium:1||Solid oxide fuel cells:1||Sputtering:1||Thin film oxides:1||Thin films:1||Tungstendoping:1||Ultrathin oxide films:1||Ultraviolet irradiation:1||VO2:1||Vanadium dioxide thin films:1||XPS:1||ambipolar materials:1||anisotropy:1||band engineering:1||band structure:1||black arsenic:1||capacitance:1||carrier mobility:1||channel migration:1||chargedcarrier fluctuation:1||contact resistance:1||defects:1||dielectric thin films:1||elastic ligand movement:1||electric admittance:1||elemental semiconductors:1||epitaxial layers:1||fieldeffect transistors:1||fieldeffecttransistor:1||focusedlaser irradiation:1||fracture:1||graphene:1||highkappa dielectric passivation:1||hydrostatic pressure:1||interlayer coupling:1||interlayer resistance:1||interlayer wave function coupling:1||ionic liquid gating:1||layered semiconductors:1||macrophage adhesion:1||macrophage polarization:1||magnetic switching:1||memory:1||metal chalcogenides:1||metalinsulator transition (MIT):1||multilayer:1||multilayers:1||nanoauger:1||nanoparticle decoration:1||negative differential interlayer resistance:1||nonvolatile memory:1||perovskite:1||phase diagram:1||phase transition:1||phase transitions:1||photoreduction:1||rhenium disulfide:1||silicon:1||silver nanoparticle:1||spinorbital coupling:1||sub 1 V operating voltages:1||surface doping:1||switch:1||tellurium:1||transition metal dichalcogenides:1||transitionmetal dichalcogenides:1||transmission electron microscopy (TEM):1||twodimensional material:1||twodimensional semiconductors:1||ultrafast switch:1||van der Waals epitaxy:1||van der Waals interaction:1||vertical doubleside contact:1||vertical doubleside contacts:1||2D:1||work function:1||3Rstacked MoS2:1||Auger electron spectroscopy:1||CONDUCTIVITY:1||Correlated electrons:1||Coulomb scattering:1||Dynamic optical tuning:1||Electrochemical conductivity:1||FIELDEFFECT TRANSISTORS:1||HEAT:1||MAPbI(3x)Cl(x):1||MIS capacitors:1||

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Sookmyung Women's University. Cheongpa-ro 47-gil 100 (Cheongpa-dong 2ga), Yongsan-gu, Seoul, 04310, Korea02-710-9127

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