ScholarWorks@Sookmyung Women's University: Joo, Min Kyu

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Joo, Min Kyu (주민규)

Engineering (Division of Materials Science and Electr)

Research Area: 나노전자 소자, 열화, 센서, Nanoelectronic device, Degradation, Sensor

Tel 02-2077-7153
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carrier transport:5||lowfrequency noise:4||rhenium disulfide:4||Contact resistance:4||Carrier mobility:3||fieldeffect transistor:3||multilayer:3||MoS2:2||Coulomb screening:2||heterostructures:2||carrier mobility:2||Coulomb scattering:2||Analytical model:2||contact resistance:2||molybdenum ditelluride:2||Schottky barrier inhomogeneity:2||graphene:2||multilayers:2||interlayer coupling:2||InGaZnO:1||Intensive heat treatment:1||Interlayer resistance:1||Magnetic field sensor:1||Magnetic resolution:1||MoS2 transistor:1||MoS2metal contacts:1||Molybdenum disulfide:1||Multilayers:1||Nanowire:1||Nitrogenplasma:1||OLEDs:1||Organic lightemitting diodes (OLEDs):1||S vacancies:1||Schottky barrier:1||Schottky barrier height:1||Specific contact resistivity:1||TMD:1||Thin film transistor:1||Threshold voltage:1||Tindioxide:1||Transfer length:1||Transmission line method:1||Twodimensional materials:1||WSe2:1||ambipolar materials:1||ambipolar transport:1||anisotropy transport:1||black phosphorus:1||capacitive coupling:1||carbon nanotube sheet:1||carrier distribution:1||channel migration:1||charge conduction mechanism:1||chargedcarrier fluctuation:1||composite materials:1||defect:1||doping effects:1||doublegated:1||drain induced barrier increasing:1||dualgate FET:1||dualgated transistor:1||edge contact:1||electrothermal local annealing (ELA):1||energy conversion:1||flatband voltage:1||gateallaround fieldeffect transistor (GAA FET):1||hBN:1||hBN dielectric:1||highkappa dielectric passivation:1||highkappa passivation:1||hot carrier injection:1||hydrothermal synthesis:1||hysteresis:1||ideality factor:1||interface trap density:1||interface traps:1||interfacial Coulomb scattering:1||interfacial adsorbates:1||interlayer resistance:1||interlayer tunneling barrier:1||ionic gating:1||junctionless transistors:1||lowfield mobility:1||lowvoltage operation:1||magnetic Hall sensor:1||metal contacts:1||metalinsulator transitions:1||mobility modulation:1||molybdenum disulfide (MoS2):1||monolayer MoS2:1||multilayer materials:1||nanostructures:1||negative differential interlayer resistance:1||neutral defects scattering:1||oxide defect:1||photoreduction:1||quantum interference:1||quantum tunneling:1||signal transmission line:1||silver nanoparticle:1||stretchable conductor:1||subthreshold swing:1||surface adsorbates:1||surface doping:1||tellurium:1||temperaturedependent gatefield attenuation:1||thin films:1||threshold voltage:1||timedependent defect spectroscopy (TDDS):1||transitionmetal dichalcogenides (TMDs):1||tungsten diselenide:1||twodimensional material:1||twodimensional materials:1||ultrashort channel:1||van der Waals semiconductors:1||vertical doubleside contact:1||vertical doubleside contacts:1||vertical type transistors:1||2D nanoelectronics:1||wearable electronics:1||4,4 'N,N 'dicarbazolebiphenyl (CBP) bis(2phenylquinoline) iridium(III) (acetylacetonate) (Ir(pq)2(acac)):1||Amorphous oxide:1||Black phosphorus:1||Channel migration:1||Characteristic trap energy:1||Charge scattering mechanism:1||Contact area:1||Coulomb drag:1||Coulomb scattering parameter:1||Degradation:1||Degradation pattern:1||Doping:1||Fermi level pinning:1||Hall element array:1||Hall sensitivity:1||Hall sensor:1||Hexagonal boron nitride:1||Ideality factor:1||

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Sookmyung Women's University. Cheongpa-ro 47-gil 100 (Cheongpa-dong 2ga), Yongsan-gu, Seoul, 04310, Korea02-710-9127

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