Initial stages of oxygen adsorption on In/Si(111)-4x1
- Authors
- Shim, Hyungjoon; Lim, Heechul; Kim, Younghoon; Kim, Sanghan; Lee, Geunseop; Kim, Hye-Kyong; Kim, Chiho; Kim, Hanchul
- Issue Date
- Jul-2014
- Publisher
- AMER PHYSICAL SOC
- Citation
- PHYSICAL REVIEW B, v.90, no.3
- Journal Title
- PHYSICAL REVIEW B
- Volume
- 90
- Number
- 3
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/10850
- DOI
- 10.1103/PhysRevB.90.035420
- ISSN
- 1098-0121
1550-235X
- Abstract
- The In/Si(111)4x1 surface with In wires is a prototypical one-dimensional electron system showing a temperature-induced structural phase transition. While most impurities are known to decrease the transition temperature (T-c), oxygen was reported to increase the T-c. In order to understand the exceptional influence of oxygen, we have examined the initial stages of oxygen adsorption on the surface by scanning tunneling microscopy (STM) and density-functional theory (DFT) calculations. Oxygen molecules were found to dissociate and adsorb as atoms on the surface. STM revealed three distinct O adsorption features as well as occasional transformations from one to another. The high-resolution images showed that all three adsorbed O features were located at the center of the In trimer at both edges of the In wire. This registry is in contradiction with the previous theoretical predictions [S. Wippermann et al., Phys. Rev. Lett. 100, 106802 (2008)]. The present DFT calculations identified two of the features as O atoms incorporated in the interstitial region between the In wire and subsurface Si layer.
- Files in This Item
-
Go to Link
- Appears in
Collections - ICT융합공학부 > 응용물리전공 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.