Detailed Information

Cited 0 time in webofscience Cited 8 time in scopus
Metadata Downloads

Initial stages of oxygen adsorption on In/Si(111)-4x1

Authors
Shim, HyungjoonLim, HeechulKim, YounghoonKim, SanghanLee, GeunseopKim, Hye-KyongKim, ChihoKim, Hanchul
Issue Date
Jul-2014
Publisher
AMER PHYSICAL SOC
Citation
PHYSICAL REVIEW B, v.90, no.3
Journal Title
PHYSICAL REVIEW B
Volume
90
Number
3
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/10850
DOI
10.1103/PhysRevB.90.035420
ISSN
1098-0121
1550-235X
Abstract
The In/Si(111)4x1 surface with In wires is a prototypical one-dimensional electron system showing a temperature-induced structural phase transition. While most impurities are known to decrease the transition temperature (T-c), oxygen was reported to increase the T-c. In order to understand the exceptional influence of oxygen, we have examined the initial stages of oxygen adsorption on the surface by scanning tunneling microscopy (STM) and density-functional theory (DFT) calculations. Oxygen molecules were found to dissociate and adsorb as atoms on the surface. STM revealed three distinct O adsorption features as well as occasional transformations from one to another. The high-resolution images showed that all three adsorbed O features were located at the center of the In trimer at both edges of the In wire. This registry is in contradiction with the previous theoretical predictions [S. Wippermann et al., Phys. Rev. Lett. 100, 106802 (2008)]. The present DFT calculations identified two of the features as O atoms incorporated in the interstitial region between the In wire and subsurface Si layer.
Files in This Item
Go to Link
Appears in
Collections
ICT융합공학부 > 응용물리전공 > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Kim, Han Chul photo

Kim, Han Chul
첨단소재·전자융합공학부 (신소재물리전공)
Read more

Altmetrics

Total Views & Downloads

BROWSE