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The metal-insulator phase transition in the strained GdBiTe3

Authors
Quang Van TranKim, Miyoung
Issue Date
May-2013
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.113, no.17
Journal Title
JOURNAL OF APPLIED PHYSICS
Volume
113
Number
17
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/11283
DOI
10.1063/1.4795743
ISSN
0021-8979
1089-7550
Abstract
In this work, we investigated the electronic structures and magnetic properties of the GdBiTe3 alloy employing a first-principles all-electron density-functional approach, aiming to understand the magnetic phase stability and electronic structure dependences on the exchange correlation potential and the strain. The results show that the ferromagnetic phase is energetically more stable over the paramagnetic phase and the metal-insulator phase transition occurs upon the lattice distortion via the strain along the perpendicular c direction, which is not influenced by the strength of correlation energy introduced to describe the localized f orbitals. Thermoelectric transport properties are also investigated to reveal that the compressive strain markedly enhances the Seebeck coefficient, which is reduced in comparison with the Bismuth telluride due to the Gd doping. (C) 2013 American Institute of Physics.
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첨단소재·전자융합공학부 (신소재물리전공)
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