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Electronic structures of a Zn vacancy on the ZnO(10(1)over-bar-0) surface: Density functional theory calculations

Authors
Chae, KisungKim, Hanchul
Issue Date
Feb-2013
Publisher
KOREAN PHYSICAL SOC
Keywords
Density functional theory; Zinc oxide; (10(1)over-bar0) surface; Zn vacancy; Energy barrier; Defect state; Scanning tunneling microscopy images
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.62, no.3, pp 508 - 512
Pages
5
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume
62
Number
3
Start Page
508
End Page
512
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/11364
DOI
10.3938/jkps.62.508
ISSN
0374-4884
1976-8524
Abstract
We perform spin-polarized density functional theory calculations for a Zn vacancy on the ZnO(100) surface. Two stable configurations of the surface Zn vacancy are found, and the activation energy barrier is estimated to be similar to 0.01 eV. The lower energy configuration has a newly formed surface Zn-O bond to restore the bulk-like structure on the surface. Due to the newly formed bond, the vacancy state in the band gap is characterized by a complicated hybridization of neighboring surface and subsurface atoms and by a more extended electron density. Despite such a hybridization, the surface Zn vacancy is found to have a robust magnetic moment of 1 mu (B) , implying that surface Zn vacancies may be responsible for the ferromagnetism observed in ZnO thin films and nanoparticles. Simulated scanning tunneling microscope images show that the two structures of the surface Zn vacancy can be distinguished in the filled-state images.
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첨단소재·전자융합공학부 (신소재물리전공)
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