Coulomb drag transistor using a graphene and MoS2 heterostructure
DC Field | Value | Language |
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dc.contributor.author | Jin, Youngjo | - |
dc.contributor.author | Joo, Min Kyu | - |
dc.contributor.author | Moon, Byoung Hee | - |
dc.contributor.author | Kim, Hyun | - |
dc.contributor.author | Lee, Sanghyup | - |
dc.contributor.author | Jeong, Hye Yun | - |
dc.contributor.author | Lee, Young Hee | - |
dc.date.available | 2021-02-22T05:21:48Z | - |
dc.date.issued | 2020-10 | - |
dc.identifier.issn | 2399-3650 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/1158 | - |
dc.description.abstract | Two-dimensional (2D) heterostructures often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, a double-layer graphene (Gr) separated by few-layered boron nitride demonstrated the Coulomb drag phenomenon: carriers in the active layer drag carriers in the passive layer. Here, we propose high-performance Gr/MoS2 heterostructure transistors operating via Coulomb drag, exhibiting a high carrier mobility (similar to 3700 cm(2) V-1 s(-1)) and on/off-current ratio (similar to 10(8)) at room temperature. The van der Waals gap at the Gr/MoS2 interface induces strong interactions between the interlayer carriers, whose recombination is suppressed by the Schottky barrier between p-Gr and n-MoS2, clearly distinct from the presence of insulating layers. The sign reversal of lateral voltage clearly demonstrates the Coulomb drag in carrier transport. Hole-like behavior of electrons in the n-MoS2 is observed in magnetic field, indicating strong Coulomb drag at low temperature. Our Coulomb drag transistor thus provides a shortcut for the practical application of 2D heterostructures. The Coulomb drag effect describes long-range electronic interactions between the charge carriers of two conducting channels separated by an insulating layer. Here, the authors report a graphene/MoS2 heterostructure which operates using the Coulomb drag effect with energy barrier and exhibits high carrier mobility and on/off current ratio at room temperature | - |
dc.format.extent | 8 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | NATURE RESEARCH | - |
dc.title | Coulomb drag transistor using a graphene and MoS2 heterostructure | - |
dc.type | Article | - |
dc.publisher.location | United Kingdom | - |
dc.identifier.doi | 10.1038/s42005-020-00461-8 | - |
dc.identifier.scopusid | 2-s2.0-85094095832 | - |
dc.identifier.wosid | 000588463400002 | - |
dc.identifier.bibliographicCitation | COMMUNICATIONS PHYSICS, v.3, no.1, pp 1 - 8 | - |
dc.citation.title | COMMUNICATIONS PHYSICS | - |
dc.citation.volume | 3 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 8 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.url | https://www.nature.com/articles/s42005-020-00461-8 | - |
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