High-mobility junction field-effect transistor via graphene/MoS2 heterointerface
DC Field | Value | Language |
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dc.contributor.author | Kim, Taesoo | - |
dc.contributor.author | Fan, Sidi | - |
dc.contributor.author | Lee, Sanghyub | - |
dc.contributor.author | Joo, Min-Kyu | - |
dc.contributor.author | Lee, Young Hee | - |
dc.date.available | 2021-02-22T05:23:30Z | - |
dc.date.issued | 2020-08 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/1330 | - |
dc.description.abstract | Monolayer molybdenum disulfide (MoS2) possesses a desirable direct bandgap with moderate carrier mobility, whereas graphene (Gr) exhibits a zero bandgap and excellent carrier mobility. Numerous approaches have been suggested for concomitantly realizing high on/off current ratio and high carrier mobility in field-effect transistors, but little is known to date about the effect of two-dimensional layered materials. Herein, we propose a Gr/MoS2 heterojunction platform, i.e., junction field-effect transistor (JFET), that enhances the carrier mobility by a factor of similar to 10 (similar to 100 cm(2) V-1 s(-1)) compared to that of monolayer MoS2, while retaining a high on/off current ratio of similar to 10(8) at room temperature. The Fermi level of Gr can be tuned by the wide back-gate bias (V-BG) to modulate the effective Schottky barrier height (SBH) at the Gr/MoS2 heterointerface from 528 meV (n-MoS2/p-Gr) to 116 meV (n-MoS2/n-Gr), consequently enhancing the carrier mobility. The double humps in the transconductance derivative profile clearly reveal the carrier transport mechanism of Gr/MoS2, where the barrier height is controlled by electrostatic doping. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | High-mobility junction field-effect transistor via graphene/MoS2 heterointerface | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1038/s41598-020-70038-6 | - |
dc.identifier.scopusid | 2-s2.0-85089020047 | - |
dc.identifier.wosid | 000561100900032 | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.10, no.1 | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 10 | - |
dc.citation.number | 1 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | MOLYBDENUM-DISULFIDE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | FILM | - |
dc.identifier.url | https://www.nature.com/articles/s41598-020-70038-6 | - |
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