Extrinsic nature of point defects on the Si(001) surface: dissociated water molecules
- Authors
- Sang-Yong Yu; Hanchul Kim; Ja-Yong Koo
- Issue Date
- Jan-2008
- Publisher
- American Physical Society
- Citation
- Physical Review Letters, v.100, no.3, pp 1 - 4
- Pages
- 4
- Journal Title
- Physical Review Letters
- Volume
- 100
- Number
- 3
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/14281
- DOI
- 10.1103/PhysRevLett.100.036107
- ISSN
- 0031-9007
1079-7114
- Abstract
- Point defects on a Si(001) - (2 × 1) surface were examined by scanning tunneling microscopy and ab initio pseudopotential calculations. The residual water molecules in the ultrahigh vacuum chamber are found to be the sole origin of the type-C defects. Most of the apparent dimer vacancies in the filled-state images were found to show a distinct U-shaped triple-dimer footprint in the empty-state images, which also originate from water adsorption. These two defects were identified as a single dissociated water molecule forming Si-OH and Si-H bonds in the
interdimer (type-C defect) and the on-dimer (dimervacancy-like or U-shape defect) configurations.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ICT융합공학부 > 응용물리전공 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.