Magneto-transport characteristics of magnetic tunnel junction with a synthetic antiferromagnetic amorphous CoFeSiB free layer
- Authors
- Chun B.S.; Lee S.Y.; Rhee J.R.; Yim H.I.; Hwang J.Y.; Kim T.W.; Kim Y.K.
- Issue Date
- Dec-2008
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Amorphous ferromagnetic; CoFeSiB; Magnetic tunnel junction; Synthetic antiferromagnet
- Citation
- IEEE Transactions on Magnetics, v.44, no.11 PART 2, pp 2598 - 2600
- Pages
- 3
- Journal Title
- IEEE Transactions on Magnetics
- Volume
- 44
- Number
- 11 PART 2
- Start Page
- 2598
- End Page
- 2600
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/14565
- DOI
- 10.1109/TMAG.2008.2002383
- ISSN
- 0018-9464
1941-0069
- Abstract
- A synthetic antiferromagnet (SAF) structure comprising two ferromagnetic amorphous CoFeSiB layers was employed as a free layer in magnetic tunnel junctions (MTJs) to enhance magnetotransport and magnetization switching performance. In Si-SiO2/Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO xl.S/CoFeSiB t (t = 3.5,4.0,4.5, 5.0)/Ru 1.0/CoFeSiB 7-t/Ru 60 (nm) MTJ structures, the tunneling magnetoresistance (TMR) ratio, interlayer coupling field, and switching field all showed layer thickness dependence for 3.5 nm ≤ t ≤ 5 nm. When the CoFeSiB t layer (a lower ferromagnetic layer in the SAF structure) became thinner, a lower TMR ratio with a lower switching field was observed. Whereas, when the CoFeSiB t layer became thicker, a higher junction resistance with a lower interlayer coupling field was observed. This was resulted from the decrement of saturation magnetization and the smooth tunnel barrier/free-layer interface formation, respectively. © 2008 IEEE.
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