Thickness-controlled multilayer hexagonal boron nitride film prepared by plasma-enhanced chemical vapor deposition
- Authors
- Park, Ji-Hoon; Choi, Soo Ho; Zhao, Jiong; Song, Seunghyun; Yang, Woochul; Kim, Soo Min; Kim, Ki Kang; Lee, Young Hee
- Issue Date
- Sep-2016
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- CURRENT APPLIED PHYSICS, v.16, no.9, pp 1229 - 1235
- Pages
- 7
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 16
- Number
- 9
- Start Page
- 1229
- End Page
- 1235
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147039
- DOI
- 10.1016/j.cap.2016.03.025
- ISSN
- 1567-1739
1878-1675
- Abstract
- Two-dimensional (2D) hexagonal boron nitride (h-BN) is a thin insulating material that can be used to enhance the electrical and optical properties of other 2D materials when used as a substrate or a capping layer, owing to its absence of dangling bonds on the surface. The use of multilayer h-BN films is often required in such applications to realize high material performance. However, previous works have focused mostly on the synthesis of monolayer or few-layer h-BN films. Herein we report a method to control the thickness of h-BN film up to the centimeter scale by means of plasma-enhanced chemical vapor deposition (PECVD). The thickness of the h-BN film is controlled by varying the deposition time of borazine precursor onto a monolayer h-BN film on a Pt foil substrate at room temperature. The resultant film is then annealed at high temperature (1050 degrees C) to increase the crystallinity of the h-BN. Monolayer h-BN film grown on Pt foil used as a buffer layer is of importance to improve uniformity and smooth surface of the multilayer h-BN film over the whole area. We further demonstrate that our multilayer h-BN film is very useful in graphene/h-BN/SiO2 heterostructures as a charge-blocking layer between graphene and SiO2. (C) 2016 Elsevier B.V. All rights reserved.
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Collections - 이과대학 > 화학과 > 1. Journal Articles
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