Room Temperature Semiconductor-Metal Transition of MoTe2 Thin Films Engineered by Strain
- Authors
- Song, Seunghyun; Keum, Dong Hoon; Cho, Suyeon; Perello, David; Kim, Yunseok; Lee, Young Hee
- Issue Date
- Jan-2016
- Publisher
- AMER CHEMICAL SOC
- Citation
- NANO LETTERS, v.16, no.1, pp 188 - 193
- Pages
- 6
- Journal Title
- NANO LETTERS
- Volume
- 16
- Number
- 1
- Start Page
- 188
- End Page
- 193
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147086
- DOI
- 10.1021/acs.nanolett.5b03481
- ISSN
- 1530-6984
1530-6992
- Abstract
- We demonstrate a room temperature semiconductor-metal transition in thin film MoTe2 engineered by strain. Reduction of the 2H-1T' phase transition temperature of MoTe2 to room temperature was realized by introducing a tensile strain of 0.2%. The observed first-order SM transition improved conductance similar to 10 000 times and was made possible by an unusually large temperature-stress coefficient, which results from a large volume change and small latent heat. The demonstrated strain-modulation of the phase transition temperature is expected to be compatible with other TMDs enabling the 2D electronics utilizing polymorphism of TMDs along with the established materials.
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