Effects of low-temperature (120 degrees C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Jae-Sung | - |
dc.contributor.author | Oh, Byung Su | - |
dc.contributor.author | Piao, Mingxing | - |
dc.contributor.author | Joo, Min-Kyu | - |
dc.contributor.author | Jang, Ho-Kyun | - |
dc.contributor.author | Ahn, Seung-Eo) | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.date.accessioned | 2022-04-19T10:02:57Z | - |
dc.date.available | 2022-04-19T10:02:57Z | - |
dc.date.issued | 2014-12 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.issn | 1089-7550 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147232 | - |
dc.description.abstract | We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 degrees C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing. (C) 2014 AIP Publishing LLC. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Effects of low-temperature (120 degrees C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1063/1.4904843 | - |
dc.identifier.scopusid | 2-s2.0-84919882916 | - |
dc.identifier.wosid | 000347164300059 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.116, no.24 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 116 | - |
dc.citation.number | 24 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4904843 | - |
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