Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution
DC Field | Value | Language |
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dc.contributor.author | Suh, J (Suh, Joonki) | - |
dc.contributor.author | Park, TE (Park, Tae-Eon) | - |
dc.contributor.author | Lin, DY (Lin, Der-Yuh) | - |
dc.contributor.author | Fu, DY (Fu, Deyi) | - |
dc.contributor.author | Park, J (Park, Joonsuk) | - |
dc.contributor.author | Jung, HJ (Jung, Hee Joon) | - |
dc.contributor.author | Chen, YB (Chen, Yabin) | - |
dc.contributor.author | Ko, C (Ko, Changhyun) | - |
dc.contributor.author | Jang, C (Jang, Chaun) | - |
dc.contributor.author | Sun, YH (Sun, Yinghui) | - |
dc.contributor.author | Sinclair, R (Sinclair, Robert) | - |
dc.contributor.author | Chang, J (Chang, Joonyeon) | - |
dc.contributor.author | Tongay, S (Tongay, Sefaattin) | - |
dc.contributor.author | Wu, JQ (Wu, Junqiao) | - |
dc.date.accessioned | 2022-04-19T10:03:06Z | - |
dc.date.available | 2022-04-19T10:03:06Z | - |
dc.date.issued | 2014-12 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.issn | 1530-6992 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147236 | - |
dc.description.abstract | Layered transition metal dichalcogenides (TMDs) draw much attention as the key semiconducting material for two-dimensional electrical, optoelectronic, and spintronic devices. For most of these applications, both n- and p-type materials are needed to form junctions and support bipolar carrier conduction. However, typically only one type of doping is stable for a particular TMD. For example, molybdenum disulfide (MoS2) is natively an n-type presumably due to omnipresent electron-donating sulfur vacancies, and stable/controllable p-type doping has not been achieved. The lack of p-type doping hampers the development of charge-splitting p-n junctions of MoS2, as well as limits carrier conduction to spin-degenerate conduction bands instead of the more interesting, spin-polarized valence bands. Traditionally, extrinsic p-type doping in TMDs has been approached with surface adsorption or intercalation of electron-accepting molecules. However, practically stable doping requires substitution of host atoms with dopants where the doping is secured by covalent bonding. In this work, we demonstrate stable p-type conduction in MoS2 by substitutional niobium (Nb) doping, leading to a degenerate hole density of similar to 3 x 10(19) cm(-3). Structural and X-ray techniques reveal that the Nb atoms are indeed substitutionally inco | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1021/nl503251h | - |
dc.identifier.scopusid | 2-s2.0-84916608164 | - |
dc.identifier.wosid | 000346322800035 | - |
dc.identifier.bibliographicCitation | NANO LETTERS, v.14, no.12, pp 6976 - 6982 | - |
dc.citation.title | NANO LETTERS | - |
dc.citation.volume | 14 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 6976 | - |
dc.citation.endPage | 6982 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/nl503251h | - |
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