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A new horizon for hexagonal boron nitride film

Authors
김기강김수민이영희
Issue Date
May-2014
Publisher
Korean Physical Society
Keywords
Chemical vapor deposition; Hexagonal boron nitride; Thin film
Citation
Journal of the Korean Physical Society, v.64, no.10, pp 1605 - 1616
Pages
12
Journal Title
Journal of the Korean Physical Society
Volume
64
Number
10
Start Page
1605
End Page
1616
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147312
DOI
10.3938/jkps.64.1605
ISSN
0374-4884
1976-8524
Abstract
Growth of hexagonal boron nitride (hBN), an isomorph of graphene/graphite, has been highlighted due to its highly insulating and transparent properties, in parallel with highly-conducting graphene counterpart, which could be useful for numerous applications. Nevertheless, difficulty arises from the absence of robust synthesis methods that provide large-area and high-quality hBN with controlled number of layers. In this article, we review the recent development for the synthesis of hBN with various approaches including liquid-metal, ultra-high-vacuum chemical vapor deposition (UHVCVD), and low-pressure CVD (LPCVD) methods. Its fundamental physical and chemical properties and its potential applications are further discussed. We expect that our comprehensive overview of the synthesis method of hBN will provide a route to find an ultimate method of synthesizing large-area and high-quality hBN with controlled number of layers.
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