Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature
DC Field | Value | Language |
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dc.contributor.author | Joo, MK | - |
dc.contributor.author | Mouis, M | - |
dc.contributor.author | Jeon, DY | - |
dc.contributor.author | Barraud, S | - |
dc.contributor.author | Park, SJ | - |
dc.contributor.author | Kim, GT | - |
dc.contributor.author | Ghibaudo, G | - |
dc.date.accessioned | 2022-04-19T10:06:14Z | - |
dc.date.available | 2022-04-19T10:06:14Z | - |
dc.date.issued | 2014-04 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.issn | 1361-6641 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147328 | - |
dc.description.abstract | This paper presents the low-temperature characteristics of flat-band (V-FB) and low-field mobility in accumulation regime (mu(0_acc)) of n-type junctionless transistors (JLTs). To this end, split capacitance-to-voltage (C-V), dual gate coupling and low-temperature measurements were carried out to systematically investigate V-FB. Additionally, the gate oxide capacitance per unit area C-ox and the doping concentration N-D were evaluated as well. Accounting for the position of V-FB and the charge based analytical model of JLTs, bulk mobility (mu(B)) and mu(0_acc) were separately extracted in volume and surface conduction regime, respectively. Finally, the role of neutral scattering defects was found the most limiting factor concerning the degradation of mu(B) and mu(0_acc) with gate length in planar and tri-gate nanowire JLTs. | - |
dc.format.extent | 13 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1088/0268-1242/29/4/045024 | - |
dc.identifier.scopusid | 2-s2.0-84896981521 | - |
dc.identifier.wosid | 000333275600026 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.29, no.4, pp 1 - 13 | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 29 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 13 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | MOS STRUCTURES | - |
dc.subject.keywordPlus | GATE | - |
dc.subject.keywordPlus | EXTRACTION | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | LENGTH | - |
dc.subject.keywordPlus | MODE | - |
dc.subject.keywordAuthor | junctionless transistors | - |
dc.subject.keywordAuthor | flat-band voltage | - |
dc.subject.keywordAuthor | low-field mobility | - |
dc.subject.keywordAuthor | neutral defects scattering | - |
dc.subject.keywordAuthor | threshold voltage | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/0268-1242/29/4/045024 | - |
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