Two-dimensional semiconductor alloys: Monolayer Mo1-xWxSe2
DC Field | Value | Language |
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dc.contributor.author | Tongay, S (Tongay, Sefaattin) | - |
dc.contributor.author | Narang, DS (Narang, Deepa S.) | - |
dc.contributor.author | Kang, J (Kang, Jun) | - |
dc.contributor.author | Fan, W (Fan, Wen) | - |
dc.contributor.author | Ko, CH (Ko, Changhyun) | - |
dc.contributor.author | Luce, AV (Luce, Alexander V.) | - |
dc.contributor.author | Wang, KX (Wang, Kevin X.) | - |
dc.contributor.author | Suh, J (Suh, Joonki) | - |
dc.contributor.author | Patel, KD (Patel, K. D.) | - |
dc.contributor.author | Pathak, VM (Pathak, V. M.) | - |
dc.contributor.author | Li, JB (Li, Jingbo) | - |
dc.contributor.author | Wu, JQ (Wu, Junqiao)...More... | - |
dc.date.accessioned | 2022-04-19T10:07:16Z | - |
dc.date.available | 2022-04-19T10:07:16Z | - |
dc.date.issued | 2014-01 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.issn | 1077-3118 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147363 | - |
dc.description.abstract | Monolayer Mo1-xWxSe2 (x = 0, 0.14, 0.75, and 1) alloys were experimentally realized from synthesized crystals. Mo1-xWxSe2 monolayers are direct bandgap semiconductors displaying high luminescence and are stable in ambient. The bandgap values can be tuned by varying the W composition. Interestingly, the bandgap values do not scale linearly with composition. Such non-linearity is attributed to localization of conduction band minimum states around Mo d orbitals, whereas the valence band maximum states are uniformly distributed among W and Mo d orbitals. Results introduce monolayer Mo1-xWxSe2 alloys with different gap values, and open a venue for broadening the materials library and applications of two-dimensional semiconductors. (C) 2014 AIP Publishing LLC. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Two-dimensional semiconductor alloys: Monolayer Mo1-xWxSe2 | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1063/1.4834358 | - |
dc.identifier.scopusid | 2-s2.0-84892150566 | - |
dc.identifier.wosid | 000329838800032 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.104, no.1 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 104 | - |
dc.citation.number | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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