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Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors

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dc.contributor.authorJoo, Min-Kyu-
dc.contributor.authorMouis, Mireille-
dc.contributor.authorJeon, Dae-Young-
dc.contributor.authorKim, Gyu-Tae-
dc.contributor.authorKim, Un Jeong-
dc.contributor.authorGhibaudo, Gerard-
dc.date.accessioned2022-04-19T10:22:23Z-
dc.date.available2022-04-19T10:22:23Z-
dc.date.issued2013-10-
dc.identifier.issn0021-8979-
dc.identifier.issn1089-7550-
dc.identifier.urihttps://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147529-
dc.description.abstractStatic and low frequency noise (LFN) characterizations in two-dimensional (2D) N-type random network thin film transistors (RN-TFTs) based on single-walled carbon nanotubes were presented. For the electrical parameter extraction, the Y-function method was used to suppress the series resistance (R-sd) influence. The gate-to-channel capacitance (C-gc) was directly measured by the split capacitance-to-voltage method and compared to 2D metal-plate capacitance model (C-2D). In addition, to account for the percolation-dominated 2D RN-TFTs, a numerical percolation simulation was performed. LFN measurements were also carried out and the results were well interpreted by the carrier number and correlated mobility fluctuation model. Finally, one-dimensional (1D) cylindrical analytical capacitance based model (C-1D) was suggested and applied to provide better consistency between all electrical parameters based on experimental and simulation results. (C) 2013 AIP Publishing LLC.-
dc.language영어-
dc.language.isoENG-
dc.publisherAMER INST PHYSICS-
dc.titleStatic and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1063/1.4825221-
dc.identifier.scopusid2-s2.0-84886562782-
dc.identifier.wosid000326117900081-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.114, no.15-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume114-
dc.citation.number15-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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