Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors
DC Field | Value | Language |
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dc.contributor.author | Joo, Min-Kyu | - |
dc.contributor.author | Mouis, Mireille | - |
dc.contributor.author | Jeon, Dae-Young | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.contributor.author | Kim, Un Jeong | - |
dc.contributor.author | Ghibaudo, Gerard | - |
dc.date.accessioned | 2022-04-19T10:22:23Z | - |
dc.date.available | 2022-04-19T10:22:23Z | - |
dc.date.issued | 2013-10 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.issn | 1089-7550 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147529 | - |
dc.description.abstract | Static and low frequency noise (LFN) characterizations in two-dimensional (2D) N-type random network thin film transistors (RN-TFTs) based on single-walled carbon nanotubes were presented. For the electrical parameter extraction, the Y-function method was used to suppress the series resistance (R-sd) influence. The gate-to-channel capacitance (C-gc) was directly measured by the split capacitance-to-voltage method and compared to 2D metal-plate capacitance model (C-2D). In addition, to account for the percolation-dominated 2D RN-TFTs, a numerical percolation simulation was performed. LFN measurements were also carried out and the results were well interpreted by the carrier number and correlated mobility fluctuation model. Finally, one-dimensional (1D) cylindrical analytical capacitance based model (C-1D) was suggested and applied to provide better consistency between all electrical parameters based on experimental and simulation results. (C) 2013 AIP Publishing LLC. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1063/1.4825221 | - |
dc.identifier.scopusid | 2-s2.0-84886562782 | - |
dc.identifier.wosid | 000326117900081 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.114, no.15 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 114 | - |
dc.citation.number | 15 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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