Carbon Quantum Dot-Based Field-Effect Transistors and Their Ligand Length-Dependent Carrier Mobility
- Authors
- Kwon, Woosung; Do, Sungan; Won, Dong Chan; Rhee, Shi-Woo
- Issue Date
- Feb-2013
- Publisher
- AMER CHEMICAL SOC
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.5, no.3, pp 822 - 827
- Pages
- 6
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 5
- Number
- 3
- Start Page
- 822
- End Page
- 827
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147532
- DOI
- 10.1021/am3023898
- ISSN
- 1944-8244
1944-8252
- Abstract
- We report electrical measurements of films of carbon quantum dots (CQDs) that serve as the channels of field-effects transistors (FETs). To investigate the dependence of the field-effect mobility on ligand length, colloidal CQDs are synthesized and ligand-exchanged with several primary amines of different ligand lengths. We measure current as a function of gate voltage and find that the devices show ambipolar conductivity, with electron and hole mobilities as high as 8.49 X 10(-5) and 3.88 X 10(-5) cm(2) V-1 s(-1) respectively. The electron mobilities are consistently 2-4 times larger than the hole mobilities. Furthermore, the mobilities decrease exponentially with the increase of the ligand length, which is well-described by the Miller-Abrahams model for nearest-neighbor hopping. Our results provide a theoretical basis to examine charge transport in CQD films and offer new prospects for the fabrication of high-mobility CQD-based optoelectronic devices, including solar cells, light-emitting devices, and optical sensors.
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