Polymer Brush As a Facile Dielectric Surface Treatment for High-Performance, Stable, Soluble Acene-Based Transistors
- Authors
- Park, K (Park, Kyungmin); Park, SH (Park, Song Hee); Kim, E (Kim, Eunhye); Kim, JD (Kim, Jong-Dae); An, SY (An, Sung-Yup); Lim, HS (Lim, Ho Sun); Lee, HH (Lee, Hyun Hwi); Kim, DH (Kim, Do Hwan); Ryu, DY (Ryu, Du Yeol); Lee, DR (Lee, Dong Ryeol); Cho, JH (Cho, Jeong Ho)
- Issue Date
- Sep-2010
- Publisher
- AMER CHEMICAL SOC
- Citation
- CHEMISTRY OF MATERIALS, v.22, no.18, pp 5377 - 5382
- Pages
- 6
- Journal Title
- CHEMISTRY OF MATERIALS
- Volume
- 22
- Number
- 18
- Start Page
- 5377
- End Page
- 5382
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147885
- DOI
- 10.1021/cm1018234
- ISSN
- 0897-4756
1520-5002
- Abstract
- We developed a facile dielectric surface modification using "grafting to" polymer brushes for high-performance and stable TES-ADT FETs. Polymer brushes were grafted onto oxide substrates by spin-coating and thermal annealing. TES-ADT FETs fabricated on top of the polymer brush layer showed excellent device performance a field-effect mobility of 0.84 cm(2)/(V s) and an on/off current ratio of 1 x 10(6)-that was superior to that of devices using conventional dielectric surface treatments such as HMDS and ODTS. During solvent annealing of the TES-ADT films, the mobile chains of the polymer brushes appear to profoundly influence the diffusion and crystallization of the TES-ADT molecules, while maximizing the pi-pi interactions along the in-plane direction. Moreover, the polymer brushes yielded excellent electrical and environmental stability because of the complete surface coverage with minimal pinholes and defects.
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