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Cycloaddition on Ge(100) of the Lewis Acid AlCl3

Authors
정순정윤영상이한길김기정김봉수김세훈
Issue Date
Mar-2008
Publisher
ACS
Citation
J. Am. Chem. Soc., v.130, no.11, pp 3288 - 3289
Pages
2
Journal Title
J. Am. Chem. Soc.
Volume
130
Number
11
Start Page
3288
End Page
3289
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/148233
DOI
10.1021/ja7112307
ISSN
0002-7863
1520-5126
Abstract
The adsorption and decomposition of AlCl3 on Ge(100) was studied using scanning tunneling microscopy (STM) and high-resolution core-level photoemission spectroscopy (HRCLPES). Through the analysis of the STM image and Ge 3d and Cl 2p core-level spectra of AlCl3 on Ge(100), we found that an AlCl3 molecule reacts with two Ge atoms via a cycloaddition reaction, which forms Cl−Ge and AlCl2−Ge without breaking AlCl3. Additionally, by considering valence shell electron pair repulsion (VSEPR) arguments, the effect of molecular structure on the surface chemistry was explained. To our knowledge, the adsorption of Lewis acid molecules on a semiconductor surface has not been studied in detail. These are the first results for the adsorption structures of Lewis acid molecule on Ge(100).
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