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Valence band structures of the phase change material Ge2Sb2Te5

Authors
Lee D (Lee, Dohyun)Lee SS (Lee, Sang Sun)Kim W (Kim, Wondong)Hwang C (Hwang, Chanyong)Hossain MB (Hossain, M. B.)Le Hung N (Le Hung, Ngyuen)Kim H (Kim, Hyojin)Kim CG (Kim, C. G.)Lee H (Lee, Hangil)Hwang HN (Hwang, Han Na)Hwang CC (Hwang, Chan-Cuk)Lee TY (Lee, Tae-Yon)Kang Y (Kang, Younseon)Kim C (Kim, Cheolkyu)Suh DS (Suh, Dong-Seok)Kim KHP (Kim, Kijoon H. P.)Khang Y (Khang, Yoonho)
Issue Date
Dec-2007
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.91, no.25, pp 1 - 3
Pages
3
Journal Title
APPLIED PHYSICS LETTERS
Volume
91
Number
25
Start Page
1
End Page
3
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/148304
DOI
10.1063/1.2825573
ISSN
0003-6951
1077-3118
Abstract
We report the experimental evidence of significant change of the valence band structure during crystallization of Ge2Sb2Te5 (GST). Amorphous GST, prepared by sputter deposition at room temperature (RT), transforms successively into face-centered-cubic (fcc) and a hexagonal-close-packed (hcp) structures at around 150 and 300 degrees C, respectively, during a stepwise temperature increase from RT to 350 degrees C. During temperature increase, ultraviolet photoemission spectra were in vacuo obtained using synchrotron radiation. The measurement of the amorphous and fcc GST shows that the difference between the maximum valence band edge and the Fermi level reduces by 0.35 eV during crystallization. For the fcc to hcp phase transformation, no band gap reduction was observed. (c) 2007 American Institute of Physics.
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