Unveiling the origin of n-type doping of natural MoS2: carbonopen access
- Authors
- Park, Youngsin; Li, Nannan; Jung, Daesung; Singh, Laishram Tomba; Baik, Jaeyoon; Lee, Eunsook; Oh, Dongseok; Kim, Young Dok; Lee, Jin Yong; Woo, Jeongseok; Park, Seungmin; Kim, Hanchul; Lee, Geunseop; Lee, Geunsik; Hwang, Chan-Cuk
- Issue Date
- Sep-2023
- Publisher
- Nature Research
- Citation
- npj 2D Materials and Applications, v.7, no.1
- Journal Title
- npj 2D Materials and Applications
- Volume
- 7
- Number
- 1
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/151598
- DOI
- 10.1038/s41699-023-00424-x
- ISSN
- 2397-7132
2397-7132
- Abstract
- MoS2 has attracted intense interest in many applications. Natural MoS2 and field-effect transistors made of it generally exhibit n-type characteristics, but its origin is unknown. Herein, we show that C is the origin of the universal n-type doping of natural MoS2. Photoemission spectroscopies reveal that while many MoS2 samples with C detected are n-type, some without C exhibit p-type characteristics. The C-free, p-type MoS2 changes to n-type over time with the concurrent appearance of C that is out-diffused from bulk, indicating that C induces the n-type doping. The C-origin is verified by C-deposition and supported by theoretical calculations. This carbon appears as nanometer-scale defects frequently observed in scanning tunneling microscopy. In addition, we propose, based on the calculations, that S vacancies are responsible for the p-type characteristics, which contrasts with the widespread belief. This work provides new perspectives on MoS2 doping and presents a new direction for fabricating reliable MoS2 devices. © 2023, Springer Nature Limited.
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