Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices
- Authors
- Ki Kang Kim; Allen Hsu; Xiaoting Jia; Soo Min Kim; Yumeng Shi; Mildred Dresselhaus; Tomas Palacios; Jing Kong
- Issue Date
- Oct-2012
- Publisher
- AMER CHEMICAL SOC
- Keywords
- hexagonal boron nitride; chemical vapor deposition; borazine; copper foil
- Citation
- ACS NANO, v.6, no.10, pp 8583 - 8590
- Pages
- 8
- Journal Title
- ACS NANO
- Volume
- 6
- Number
- 10
- Start Page
- 8583
- End Page
- 8590
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/159286
- DOI
- 10.1021/nn301675f
- ISSN
- 1936-0851
1936-086X
- Abstract
- Hexagonal boron nitride (h-BN) is a promising material as a dielectric layer or substrate for two-dimensional electronic devices. In this work, we report the synthesis of large-area h-BN film using atmospheric pressure chemical vapor deposition on a copper foil, followed by Cu etching and transfer to a target substrate. The growth rate of h-BN film at a constant temperature is strongly affected by the concentration of borazine as a precursor and the ambient gas condition such as the ratio of hydrogen and nitrogen. h-BN films with different thicknesses can be achieved by controlling the growth time or tuning the growth conditions. Transmission electron microscope characterization reveals that these h-BN films are polycrystalline, and the c-axis of the crystallites points to different directions. The stoichiometry ratio of boron and nitrogen is dose to 1:1, obtained by electron energy loss spectroscopy. The dielectric constant of h-BN film obtained by parallel capacitance measurements (25 mu m(2) large areas) is 2-4. These CVD-grown h-BN films were integrated as a dielectric layer In top-gated CVD graphene devices, and the mobility of the CVD graphene device (in the few thousands cm(2)/(V . s) range) remains the same before and after device integration.
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