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Triple-halide wide-bandgap perovskites tailored via facile organic halide treatment for high-performance perovskite/Cu(In,Ga)Se2 tandem solar cellsopen access

Authors
Tran, HuyenNaqvi, Syed Dildar HaiderKim, KihwanLee, AhreumOh, SeungjuSiddique, YasirUllah, AsmatAli, Shah Syed FawadPark, MinwooHong, SungjunAhn, SejinGwak, JihyeJeong, Inyoung
Issue Date
Nov-2023
Publisher
Elsevier B.V.
Keywords
Copper indium gallium selenide; Defect passivation; Perovskite solar cell; Tandem cell
Citation
Chemical Engineering Journal, v.476
Journal Title
Chemical Engineering Journal
Volume
476
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/159509
DOI
10.1016/j.cej.2023.146825
ISSN
1385-8947
1873-3212
Abstract
Wide-bandgap (Eg) perovskites (PVSK) are important materials for realizing high-efficiency tandem devices that surpass the efficiency limit of single-junction solar cells. However, they suffer from phase separation and open-circuit voltage (Voc) loss. This study demonstrated a facile fabrication strategy of highly efficient and stable wide-Eg PVSKs through an organic halide surface treatment with formamidinium bromide to CH3NH3PbI3-xClx. The concurrent diffusion of organic cations and halide ions from the surface into bulk PVSK results in the complete conversion of the PVSK crystallinity to a cubic phase, eliminating segregated secondary phases and reducing unreacted PbI2. Br incorporation induces halide redistribution, resulting in the formation of triple-halide wide-Eg PVSK. The complete reconstruction of the bulk and surface of PVSK by surface post-treatment suppresses trap-induced nonradiative recombination and decreases the Urbach tail energy. Inverted PVSK solar cells based on the reconstructed PVSK exhibit enhanced photovoltaic performance with a low Voc deficit and high stability. In addition, we demonstrated a four-terminal (4-T) tandem device based on the triple-halide wide-Eg PVSK as a top cell combining with a Cu(In,Ga)Se2 bottom cell, achieving a power conversion efficiency of 24.5 %. © 2023 The Authors
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