Photo-oxidative Crack Propagation in Transition Metal Dichalcogenides
- Authors
- Ben-Smith, Andrew; Choi, Soo Ho; Boandoh, Stephen; Lee, Byung Hoon; Vu, Duc Anh; Nguyen, Huong Thi Thanh; Adofo, Laud Anim; Jin, Jeong Won; Kim, Soo Min; Lee, Young Hee; Kim, Ki Kang
- Issue Date
- Jan-2024
- Publisher
- AMER CHEMICAL SOC
- Keywords
- chemical vapor deposition; transition metal dichalcogenides; crack; photo-oxidation; humidity
- Citation
- ACS NANO, v.18, no.4, pp 3125 - 3133
- Pages
- 9
- Journal Title
- ACS NANO
- Volume
- 18
- Number
- 4
- Start Page
- 3125
- End Page
- 3133
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/159761
- DOI
- 10.1021/acsnano.3c08755
- ISSN
- 1936-0851
1936-086X
- Abstract
- Monolayered transition-metal dichalcogenides (TMDs) are easily exposed to air, and their crystal quality can often be degraded via oxidation, leading to poor electronic and optical device performance. The degradation becomes more severe in the presence of defects, grain boundaries, and residues. Here, we report crack propagation in pristine TMD monolayers grown by chemical vapor deposition under ambient conditions and light illumination. Under a high relative humidity (RH) of similar to 60% and white light illumination, the cracks appear randomly. Photo-oxidative cracks gradually propagated along the grain boundaries of the TMD monolayers. In contrast, under low RH conditions of similar to 2%, cracks were scarcely observed. Crack propagation is predominantly attributed to the accumulation of water underneath the TMD monolayers, which is preferentially absorbed by hygroscopic alkali metal-based precursor residues. Crack propagation is further accelerated by the cyclic process of photo-oxidation in a basic medium, leading to localized tensile strain. We also found that such crack propagation is prevented after the removal of alkali metals via the transfer of the sample to other substrates.
- Files in This Item
-
Go to Link
- Appears in
Collections - 이과대학 > 화학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.