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Remanence analysis of sub-micron MTJ cell with CoFe/NiFe free layer
- Issue Date
- Dec-2004
- Citation
- Physica Status Solidi C: Conferences, v.1, no.12, pp 3538 - 3541
- Pages
- 4
- Journal Title
- Physica Status Solidi C: Conferences
- Volume
- 1
- Number
- 12
- Start Page
- 3538
- End Page
- 3541
- ISSN
- 1610-1634
- Abstract
- We investigate switching properties of patterned sub-micron magnetic tunnel junctions (MTJs) incorporating NiFe and CoFe free layers of different thickness through magnetotransport measurements. The remanent state measurements can separate respective effect of 2π-domain wall, vortex, and multi-domain formation on non-uniform R-H curve of MTJ free layer. The reduction of CoFe insertion layer thickness leads to the suppression of vortex magnetization during switching. 0© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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