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Dependence of natural oxidation spin-dependent tunneling junction on junction area
- Issue Date
- Feb-2002
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.189, no.3, pp 659 - 662
- Pages
- 4
- Journal Title
- PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
- Volume
- 189
- Number
- 3
- Start Page
- 659
- End Page
- 662
- ISSN
- 0031-8965
1521-396X
- Abstract
- The top-type tunneling magneto resistance (TMR) multilayer films with a structure of Ta5/NTiFe10/Ta5/NiFe10/FeMn10/NiFe2/CoFe2/Al2O3I/CoFe3/NiFe20 (thickness in nm) with in-situ natural AlOx oxidation were deposited by a sputtering system with a base pressure of 10(-9) Torr. Junctions with sizes from 4 to 80 mum(2) were fabricated by using a conventional photolithography process. The as-deposited junction showed TMR of 16% at room temperature with resistance of 14-15 Omega, dependent on junction area.
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